IXGA48N60C3 Allicdata Electronics
Allicdata Part #:

IXGA48N60C3-ND

Manufacturer Part#:

IXGA48N60C3

Price: $ 2.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 300W TO263AA
More Detail: IGBT PT 600V 75A 300W Surface Mount TO-263 (IXGA)
DataSheet: IXGA48N60C3 datasheetIXGA48N60C3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.00000
10 +: $ 1.94000
100 +: $ 1.90000
1000 +: $ 1.86000
10000 +: $ 1.80000
Stock 1000Can Ship Immediately
$ 2
Specifications
Power - Max: 300W
Base Part Number: IXG*48N60
Supplier Device Package: TO-263 (IXGA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 30A, 3 Ohm, 15V
Td (on/off) @ 25°C: 19ns/60ns
Gate Charge: 77nC
Input Type: Standard
Switching Energy: 410µJ (on), 230µJ (off)
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Current - Collector Pulsed (Icm): 250A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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An IXGA48N60C3 is a type of insulated-gate bipolar transistor (IGBT) specifically constructed for use in medium-voltage and high-voltage applications. IGBTs are used for this purpose because of their combination of the high-current carrying capacity of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current switching capability of a bipolar junction transistor (BJT).

The IXGA48N60C3 is a single device with a voltage rating up to 600 volts. It is constructed of N-channel MOSFET cells and PN-junction diodes. The N-channel MOSFET cells are insulated from each other by a dielectric material, typically glass. This insulation is necessary to ensure that the N-channel MOSFET cells are not shorted together by high-current spikes, resulting in high-voltage breakdown of the device. Each cell is also surrounded by an intrinsic diode, which is connected to the anode of the device. The anode is the positive terminal of the device.

The IXGA48N60C3 device is typically used as a switch for high-voltage/high-current AC and DC applications. When the voltage across the device is below the gate threshold voltage, the device is in its off state. This is due to the depletion of the gate oxide region, which prevents the conduction of electrons across the device. When the voltage across the device is above the gate threshold voltage, the channel begins to conduct and the device is in its on state. This allows the current to flow from the anode to the cathode of the device.

The IXGA48N60C3 is used in a variety of applications, including AC motor control, DC motor control, solar inverters, consumer electronics, and industrial automation. Its high-voltage/high-current capability make it well suited for these applications. Additionally, its switching speed, power efficiency, and cost effectiveness make it a preferred choice for many designs.

In summary, the IXGA48N60C3 is a single device with a voltage rating up to 600 volts. It is constructed of N-channel MOSFET cells and PN-junction diodes. The IXGA48N60C3 device is used as a switch for high-voltage/high-current AC and DC applications. It is primarily used for AC motor control, DC motor control, solar inverters, consumer electronics, and industrial automation due to its high-voltage/high-current capability, high switching speed, power efficiency, and cost effectiveness.

The specific data is subject to PDF, and the above content is for reference

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