IXGA16N60C2D1 Allicdata Electronics
Allicdata Part #:

IXGA16N60C2D1-ND

Manufacturer Part#:

IXGA16N60C2D1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 40A 150W TO263
More Detail: IGBT PT 600V 40A 150W Surface Mount TO-263 (IXGA)
DataSheet: IXGA16N60C2D1 datasheetIXGA16N60C2D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 160µJ (on), 90µJ (off)
Base Part Number: IXG*16N60
Supplier Device Package: TO-263 (IXGA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 30ns
Test Condition: 400V, 12A, 22 Ohm, 15V
Td (on/off) @ 25°C: 16ns/75ns
Gate Charge: 25nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Current - Collector Pulsed (Icm): 100A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGA16N60C2D1 Application Field and Working Principle

IXGA16N60C2D1 is a high-speed power IGBT module composed of high-voltage IGBTs and fast diodes, which introduces the application fields and working principle of it.

Application Fields of IXGA16N60C2D1

The IXGA16N60C2D1 is designed to ensure reliable performance in demanding switching applications. It is often used in Industrial drive, UPS, power transmission and distribution, welders and solar inverters. It also has wide applications in various fields such as medical devices, railway and aerospace.

Since the IXGA16N60C2D1 transistors can switch at high speeds and handle large current levels, they are solutions for design situations or projects that require a high level of power efficiency. In addition, its switching loss and short-circuit withstand time are optimized.

IXGA16N60C2D1 can be used in applications that require a high current capacity, high switching speed and high efficiency such as welding, automotive power conversion, solar inverter and drives.

Working Principle of IXGA16N60C2D1

IXGA16N60C2D1 is a high current rated IGBT module and consists of a high voltage IGBT along with a fast diode. It is installed in plastic concentration with the configuration of a dual source arrangement.

The IGBT module consists of a single chip containing n-type and p-type transistors coupled together to form an IGBT. When current is applied to the IGBT module, a voltage is created that enables the n-type transistor to switch on and the p-type transistor to switch off. This allows the flow of a controlled current from one end of the transistor to the other. As a result, the IXGA16N60C2D1 IGBT module can effectively transfer power in applications where high current capacity, switching speed and efficiency are desired.

When the IGBT module is operating in its on state, the gate voltage will be the same as the applied voltage. As the voltage across the IGBT module increases, the switching speed increases as well. The module also features a built in fast recovery diode, which is used to protect the device and ensure safe operation.

IXGA16N60C2D1 has been designed to ensure reliable performance in demanding switching applications. With its high-speed switching capability and power efficiency, it is a popular choice for many applications and systems.

The specific data is subject to PDF, and the above content is for reference

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