IXGA15N100C

IXGA15N100C is a high power switching mode IGBT (Insulated Gate Bipolar Transistor) module, which is characterized by high working frequency, high current sharing and good switching speed.

This type of IGBT integrates two power MOSFETs and one anti-parallel diode and is available in a standard TO-247 package. With its high current and voltage ratings, the IXGA15N100C is suitable for a wide range of applications, such as motor drives, induction heating, welding, and renewable energy systems.

This IGBT module is designed for high frequency operations, like those in the frequency range of 20 kHz to 1MHz. Furthermore, it offers high voltage isolation in inverters and short circuit device protection from low fault current levels. Finally, the thermal performance of this IGBT module is optimized to ensure fast switching speeds and working frequencies.

The IXGA15N100C has a maximum blocking voltage of 1,500 volts, a total power dissipation capability of 1.8kW, and it can withstand a peak voltage of 2.8kV, making it suitable for high power applications. In addition, its gate turn-off (GTO) capability make it suitable for use as a current limiter. Furthermore, this IGBT has a high load capacity of up to 1A, which enables it to handle high fault current levels. Finally, it has a low gate threshold voltage, making it suitable for low voltage switching applications.

The working principle of the IXGA15N100C is based on the principle of bipolar junction transistors. In this type of IGBT, current flows through the collector-emitter junction when a voltage is applied to the gate-emitter junction. The collector-emitter current is then modulated by the applied gate voltage, allowing the device to switch high current levels. The anti-parallel power MOSFET integrated in the IXGA15N100C helps in fast turn-off of the collector-emitter current, thus increasing the speed of operations.

In summary, the IXGA15N100C is a high power IGBT module that is suitable for motor drives, induction heating, welding, and renewable energy applications. It features high current and voltage ratings with a peak voltage of 2.8kV, a maximum blocking voltage of 1,500 volts, a total power dissipation capability of 1.8kW, and a high load capacity of up to 1A. This module has a GTO capability and is designed for high frequency operations in the frequency range of 20 kHz to 1MHz. It has a low gate threshold voltage, making it suitable for low voltage switching applications. Finally, the IXGA15N100C works on the principle of bipolar junction transistors and is integrated with an anti-parallel power MOSFET to allow fast turn-off of the collector-emitter current.