IXGA7N60B

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The IXGA7N60B is a single Insulated Gate Bipolar Transistor (IGBT), specifically designed for use in high-density power switching applications. It is designed to provide superior performance and reliability in applications such as motor control, ac-dc converters, power factor correction, and industrial and automotive power systems.

The IXGA7N60B is a high-voltage N-channel MOSFET with a typical breakdown voltage of 800 V. It features a maximum collector-emitter voltage rating of 700 V, a collector current of 60 A, and an operating temperature range of -55 to 150°C. The package type is a TO-220 version with a typical DC current gain of 9 at 4.5 V.

The IXGA7N60B is a low on-resistance IGBT and has a low gate charge Qg which makes it ideal for high-frequency applications. It also has low operating losses, enabling higher efficiency in power switching applications. Additionally, the device is EMI compliant, meeting class B standards.

The IXGA7N60B is designed to be operated in an inverter or a PFC system. In an inverter, the device is used to switch between two dc or ac power supplies, while in the PFC system it is used to control the power factor of the incoming ac power source. These systems usually involve high-frequency switching and, thus, require an IGBT with low switching losses.

The IXGA7N60B is a low-loss IGBT, due to its low on-resistance (RDS(on)) and low gate charge (Qg). It has a Eon of approximately 8 mJ and a Qg of approximately 27 nC. This enables faster switching speeds, which allow for higher efficiency operation without sacrificing reliability.

The IXGA7N60B has an integrated logic level gate drive, which allows it to be operated in both high- and low-side configurations for motor control and ac/dc converters. The device also has an integrated Miller clamp which reduces parasitic switching turn-off losses. The device is protected from over-voltage and over-temperature conditions through its temperature sensing feature.

The IXGA7N60B has a compact package size, making it suitable for high-density power modules and applications. Its high-frequency performance is further enhanced by its low inductance switching characteristics and a wide operating temperature range.

In summary, the IXGA7N60B is an ideal choice for high-density power switching applications due to its low losses, high-frequency switching capability and thermal protection. This device is normally specified for applications such as motor control, ac/dc converters and power factor correction.

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