IXGA7N60BD1 Allicdata Electronics
Allicdata Part #:

IXGA7N60BD1-ND

Manufacturer Part#:

IXGA7N60BD1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 14A 80W TO263
More Detail: IGBT 600V 14A 80W Surface Mount TO-263 (IXGA)
DataSheet: IXGA7N60BD1 datasheetIXGA7N60BD1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 300µJ (off)
Base Part Number: IXG*7N60
Supplier Device Package: TO-263 (IXGA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 35ns
Test Condition: 480V, 7A, 18 Ohm, 15V
Td (on/off) @ 25°C: 10ns/100ns
Gate Charge: 25nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 80W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
Current - Collector Pulsed (Icm): 56A
Current - Collector (Ic) (Max): 14A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Recently, IXGA7N60BD1 has emerged as one of the most popular integrated circuit devices in the market. It belongs to the category of transistors particularly IGBTs (Insulated Gate Bipolar Transistor), and is designed as a single type amplifier. This device can be used for various applications, especially for fast switching applications. Its low power consumption, high efficiency and low on-state resistance has made this device to a huge potential for different industries.

The IXGA7N60BD1 is a type of bipolar transistor particularly IGBT, which is formed by combining an insulated gate with an N-channel, vertical MOSFET. Because of its combination of benefits from the MOSFET and the bipolar junction transistor (BJT), it could possess high voltage, fast switching speed and low-on-state resistance. Therefore, it can be used in various application fields such as high power switching, induction heating and various demanding power electronic industrial applications.

The working of an IXGA7N60BD1 is similar to that of a normal BJT, with the exception that it is an N-channel IGBT. In this type of transistor, the gate is insulated from the base-collector and the collector-emitter paths. This transistor works by alternating the charge carriers through the collector and base terminals and back to the emitter. When the gate is pushed with voltage, the transistor and its variations of operation modes is switched on and off. It also allows for faster switching than that of a BJT.

The IXGA7N60BD1 are highly resistant to breakdowns which makes them suitable for use in high-voltage applications. The higher voltage rating of the IXGA7N60BD1 also helps eliminate the need for external components, further reducing system cost and boosting performance. Moreover, its low-on-state resistance result in low power consumption and increase its efficiency.

The IXGA7N60BD1 features fast switching speed and low-on-state resistance, which makes it suitable for application fields where fast switching and high output current are required, such as induction heating and various power electronic applications. It has been extensively used in industrial electrical applications since its release.

To sum up, IXGA7N60BD1 belongs to the IGBTs transistor family and is used as a single type amplifier with many application fields. It has low power consumption, high efficiency and low on-state resistance making it very suitable for high power switching, induction heating and other demanding power electronic industrial applications. Thanks to its fast switching speed and high output current, these transistors are more and more used in various industrial electrical applications.

The specific data is subject to PDF, and the above content is for reference

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