IXGA48N60B3

Transistors - IGBTs - Single

The IXGA48N60B3 IGBT is a type of power transistor which belonged in the family of Insulated-Gate Bipolar Transistors (IGBTs). This device is widely used in power electronics and is suitable for both low- and high-power switching applications. It is widely applied in many applications including motor speed control, battery charger, power supplies and motor control.

IGBTs come with three main characteristics which make them ideal for power applications.

Dynamic Resistance

IGBTs have a very low dynamic resistance which allows for switching higher currents than a MOSFET. The dynamic resistance is the ratio between the gate voltage to collector voltage and is also known as Gate Charge.

High Current Capability

The IXGA48N60B3 IGBT is capable of handling high current flow. The device can handle high peak current and has a high surge current capability. This makes it suitable for various applications such as motor control and battery charging.

Low On-State Voltage

The IGBTs come with a low on-state voltage. This means that it can be turned on with a minimum gate voltage, which can be as low as 1.8V. This is important because low on-state voltage means lesser power losses and less heat dissipation.

IXGA48N60B3 Application Field and Working Principle

The IXGA48N60B3 IGBT is mainly used in applications that need higher currents than a MOSFET can handle, such as motor speed control, battery charger, power supplies, and motor control. Furthermore, the device can be used for high voltage and high power applications.

The working principle of the IXGA48N60B3 is same as other IGBTs, which involves switching an insulated gate to control the current flow. When the insulated gate is switched off, the device offers fast switching with low losses due to its low on-state voltage. When switched on, the same insulated gate can control the current flow to the collector for a stable operation. The device also has a very low dynamic resistance which makes it particularly appealing for power applications.

The IXGA48N60B3 IGBT is based on the vertical N-channel structure which offers many advantages such as higher current carrying capacity and low on-state voltage drop. The advantages of its vertical N-channel structure includes fast switching speed, low gate charge, high temperature operating capability, and wide safe operating area. Overall, the IXGA48N60B3 is a high performing device with many advantages that make it desirable for power electronic applications.