IXGA15N120B

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The IXGA15N120B is a type of insulated-gate bipolar transistor (IGBT) commonly used in industrial, consumer and other applications. It is a single, low VCE(SAT), low Eoff IGBT with anti-parallel diode.

An IGBT is a device that combines the properties of a bipolar junction transistor and that of a field-effect transistor. It is a three-terminal device that allows voltage-controlled current. It has higher efficiency, lower power dissipation and lower switching losses than regular BJTs. It also operates at much higher speeds.

The IXGA15N120B utilizes a fast-recovery body diode that is suitable for short circuit and reactive load applications. It features a fast turn-off, low Eoff, and no shoot-through current. The IGBT has a short circuit rating of 75A, maximum blocking voltage of 1200 Volt, Eoff of 2.5 mJ and a maximum voltage drop of 2.6V when conducting currents of 2A.

The IXGA15N120B has a wide application field which includes motor drives, welding systems, audio amplifiers, dc-dc converters, solar inverters, switch mode power supplies, lighting systems, uninterruptible power supplies, industrial power supplies and renewable energy systems.

Its working principle is that of a P-N-P device in which the lower P-type base layer is the control layer. A voltage applied between the collector and base terminal allows the transistor to conduct or block current, depending on the polarity of the voltage. An electric field created by the applied voltage attracts electrons from the drain, and applying a positive voltage will cause the IGBT to turn on while applying a negative voltage turns off the IGBT.

Due to its low on-state and switching losses, fast turn-off time and fast recovery body diode, the IXGA15N120B IGBT is an ideal choice for high power industrial and other applications. It is an efficient and reliable device and is widely employed in the industrial, consumer and other application sectors.

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