IXGA7N60C Allicdata Electronics
Allicdata Part #:

IXGA7N60C-ND

Manufacturer Part#:

IXGA7N60C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 14A 54W TO263
More Detail: IGBT PT 600V 14A 54W Surface Mount TO-263 (IXGA)
DataSheet: IXGA7N60C datasheetIXGA7N60C Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 54W
Base Part Number: IXG*7N60
Supplier Device Package: TO-263 (IXGA)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 7A, 22 Ohm, 15V
Td (on/off) @ 25°C: 9ns/65ns
Gate Charge: 25nC
Input Type: Standard
Switching Energy: 70µJ (on), 120µJ (off)
Series: HiPerFAST™, Lightspeed™
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Current - Collector Pulsed (Icm): 30A
Current - Collector (Ic) (Max): 14A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGA7N60C belongs to the type of transistors called "Insulated Gate Bipolar Transistors"(IGBTs). It is a single type IGBT and has become a great choice for applications in high voltage, low frequency, and power conversion. The IXGA7N60C is a powerful and reliable transistor capable of high switching speed, high power conversion efficiency, and low saturation voltage.

The IXGA7N60C includes a vertical layout in which a silicon integrated gate has been built into a thyristor. It has three terminal connectors: the collector, the gate, and the emitter. The collector is connected to the drain terminal of the IGBT, the gate connector is connected to the source, and the emitter is connected to the source terminal. All terminals are designed to be compatible with the relevant standard and socket definition.

The IXGA7N60C relies on a special type of semiconductor, usually silicon, which uses electrons in the current to control the motion of electrons in an electrical field, making the IGBTs work as an amplifier. This is achieved by the use of the Gate electrode which, when a voltage is applied to it, creates an electric field. This in turn allows for current to be conducted between the Collector and Emitter contacts, thus acting as an amplifier.

The IXGA7N60C has a wide range of applications, both in commercial and industrial settings. Most commonly, it is used as a power switch in electrical systems, circuits, and power-conversion applications. It can also be used to protect and control power systems, and can, therefore, be seen in a variety of applications, such as in power supplies, battery chargers, UPS systems, and household and industrial control systems.

The IXGA7N60C also has important applications in motor control, rectification, and power conversion, as well as in telecommunications, automotive, aerospace and other industrial processes. In these applications, the IGBT\'s switching speed and performance make it an ideal choice. For example, in motor control and power conversion applications, the IXGA7N60C is used to modulate the voltage applied to motors, thus providing power with better efficiency and reliability.

The IXGA7N60C transistor uses various characteristics in order to control inrush current, voltage fluctuations, and over-current protection. It has the ability to switch rapidly and provide a large gain at the same time, thus limiting the power loss that comes with other types of transistors. It also offers a large current carrying capacity and excellent thermal stability, making it a good choice for applications requiring powerful transistors.

In conclusion, the IXGA7N60C is a single type IGBT that offers great power efficiency, high switching speeds, and low saturation voltages, making it a desirable choice for many applications. Due to its high-voltage and power efficiency performance, the IXGA7N60C is widely used in a variety of high voltage and power conversion applications. It is also highly reliable and offers excellent thermal stability, making it an ideal choice for applications requiring a powerful transistor.

The specific data is subject to PDF, and the above content is for reference

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