JAN2N1479 Allicdata Electronics
Allicdata Part #:

1086-16073-ND

Manufacturer Part#:

JAN2N1479

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 60V 1.5A
More Detail: Bipolar (BJT) Transistor
DataSheet: JAN2N1479 datasheetJAN2N1479 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: *
Part Status: Discontinued at Digi-Key
Description

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Introduction

JAN2N1479 is a type of Single Bipolar Junction Transistor (BJT). It is a three terminal semiconductor device which has the ability to control current flow in an external circuit. This device can be used for a range of applications such as amplifying or switching signals within a circuit, and has become a popular device amongst electrical eqipment manufacturers.

Basic Operation

BJT transistors are based on a backward diode-like structure. This structure is composed of a base region, a collector region, and an emitter region. The base and collector regions are made of doping material, typically heavily doped N-type silicon, while the emitter is typically a lightly doped P-type material.Diodes are formed in the base-collector junction and emitter-collector junction. The junction areas between the base and collector makes up the PN junction diode, which when forward biased, can prevent current from flowing through the collector due to the reverse biased junction.However, when a current is applied to the base-emitter junction, the junction becomes forward biased, allowing current to flow through the collector-emitter junction. This ‘vertical’ current flow is known as the ‘emitter current’.The collector-current, or ‘horizontal’ current flow, is the current that flows through the emitter-collector junction due to the current flowing through the base-emitter junction.The ratio of these two current flows is known as the ‘current gain’ and is determined by the base-collector voltage.Essentially, a BJT transistor works as an electronically controlled switch, which can be used to amplify or switch signals.

JAN2N1479 Applications

The JAN2N1479 has a wide variety of applications due to its low voltage and current gain characteristics.Due to its low voltage characteristics, it can be used for low voltage amplifier circuits and low current filtering. It is also useful for small signal switching application and it can also be used as an input and output switch in transistor amplifiers.The low current gain characteristics of JAN2N1479 transistor makes it especially suited for high impedance applications such as current limiting, temperature control and power supply stabilization. Moreover, this transistor can also be used in audio amplifiers, interface circuits, switching circuits, and converters.

Working Principle

A BJT transistor works based on the flow of electrons through the base-collector and base-emitter junctions. These currents flow in ‘vertical’ and ‘horizontal’ paths as described above. The ‘vertical’ current that flows in the base-emitter junction is called the ‘emitter current’. This current is primarily responsible for the amplification or switching of signals. The ‘horizontal’ current that flows in the collector-emitter junction is called the ‘collector current’. This current is used to control the flow of the emitter current. The ratio of these two current flows is determined by the base-collector voltage. When the voltage across this junction increases, the current gain also increases. In a BJT transistor, each junction has an associated voltage. The base-collector voltage is typically two to five times larger than the base-emitter voltage. This difference in voltage allows the BJT transistor to be used in many different applications, such as amplifying or switching signals. The BJT transistor works on the principle of charge carrier concentration, whereby the concentration of free electrons and holes is determined by the voltage across the semiconductor material.

Conclusion

JAN2N1479 is a single bipolar junction transistor which has a wide range of applications due to its low voltage and current gain characteristics. This transistor can be used for amplifier circuits, interface circuits, switching circuits, and temperature control, as well as many other applications. At the heart of the BJT transistor lies the principle of charge carrier concentration, whereby the concentration of free electrons and holes is determined by the voltage across the junctions. This fundamental principle allows the BJT transistor to be used for numerous amplification, switching and filtering tasks.

The specific data is subject to PDF, and the above content is for reference

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