JAN2N3810 Allicdata Electronics
Allicdata Part #:

1086-2357-ND

Manufacturer Part#:

JAN2N3810

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS 2PNP 60V 0.05A TO78
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50...
DataSheet: JAN2N3810 datasheetJAN2N3810 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/336
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Power - Max: 350mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Supplier Device Package: TO-78-6
Description

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The JAN2N3810 is a discrete silicon NPN transistors commonly used within an array. It is designed for low noise and high voltage applications, typically in communication systems, broadcast, or base station services. The device can handle higher currents than similar transistors and is often used for high-end audio production. It is an integrated circuit (IC) that has many individual components, such as transistors, resistors, and capacitors packaged together. This article provides an overview of the JAN2N3810\'s application field, working principle, and properties.

Application Field

The JAN2N3810 is well-suited for applications such as audio power amplifiers, high-performance electronic communication systems, and power supply circuits. Its high voltage rating allows it to handle voltage surges, while its low operating temperature makes it suitable for operating in temperature-sensitive environments. Its easy-to-use design and low price make it an economical and popular choice for larger electronic system designs. Its array design gives it an advantage over other transistors, as it can be used to drive multiple outputs simultaneously and quickly.

Working Principle

The JAN2N3810 is composed of a silicon NPN transistor array, with each sub-circuit being individually connected to each other. Each circuit consists of a collector, a base, and an emitter. The collector is the output of the transistor array, while the base and emitter are the primary inputs. When a current is applied to the base, it controls the current flow through the collector. This allows the JAN2N3810 to amplify small signals and switch between different voltage levels. This switching ability can be used to control multiple outputs at the same time.

Properties

The JAN2N3810 has a DC current gain of up to 1000 and an operating temperature range of -55 to 150 degrees Celsius. It features an insertion depth of 5.5mm and a package size of 2.3x2.3mm. The device also has a voltage rating of 200V, a maximum current rating of 650 mA and a maximum power dissipation of 10 watts. Additionally, the device has a PNP complement device called the JAN2N3810J.

Conclusion

The JAN2N3810 is a versatile, low noise, and high-voltage NPN transistor array. Its application field includes audio amplifiers, broadcast services, and power supply circuits. The chip operates via a collector, base, and emitter and is capable of switching between different voltage levels. It has a DC current gain of up to 1000 and features an operating temperature range of -55 to 150 degrees Celsius. Additionally, the device has a PNP complement device called the JAN2N3810J and is frequently used for large audio and communication systems.

The specific data is subject to PDF, and the above content is for reference

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