JAN2N5302 Allicdata Electronics
Allicdata Part #:

1086-16142-ND

Manufacturer Part#:

JAN2N5302

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 60V 30A TO-3
More Detail: Bipolar (BJT) Transistor NPN 60V 30A 5W Through H...
DataSheet: JAN2N5302 datasheetJAN2N5302 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/456
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Power - Max: 5W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3 (TO-204AA)
Description

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Transistors - Bipolar (BJT) - Single

The JAN2N5302 is a single NPN-type transistor suitable for applications that involve switching and amplification at frequencies up to 300MHz. This transistor is typically used for low-level amplification of weak signals, as well as for driving audio-frequency power amplifiers.The JAN2N5302 is designed for use in medium to high-power applications where high-current gain and low noise operation is essential. This makes it a popular choice for low-level amplification and signal isolation applications. The JAN2N5302 transistor consists of two separate transistors in a single package. One is the NPN collector-emitter type, which forms the main switching device. The other is the PNP collector-emitter type, which forms the second amplifier. This arrangement allows a more efficient use of space and power consumption in the device.The NPN collector-emitter transistor is the primary active component of the device. It is responsible for switching signals and amplifying low-level signals. The current gain of the NPN portion of the transistor is around 200/1 (depending on the collector voltage). The PNP collector-emitter portion of the device is used as the second amplifier and helps to reduce noise levels by acting as a low-level feedback amplifier.The maximum collector-emitter voltage of the device is 12V and the maximum continuous collector current is 200mA. The device has an operating temperature range of -55 to +175C and a maximum power dissipation of 0.5 watts. The JAN2N5302 transistor is designed for mounting on Toroidal pin grids as well as commercial TO-220-style packages.The JAN2N5302 is also well-suited for other high-frequency applications such as switching power supplies, frequency converting and control circuits. It is also commonly used in RF amplifiers and oscillators. The JAN2N5302 transistor is a versatile and reliable device capable of providing high performance in a range of applications. It is easy to use and assemble, requires minimal external components and has a wide operating temperature range. As such, it is an ideal choice for a range of projects in the electronics hobbyist sector and for commercial use.

The specific data is subject to PDF, and the above content is for reference

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