| Allicdata Part #: | 1086-16142-ND |
| Manufacturer Part#: |
JAN2N5302 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 60V 30A TO-3 |
| More Detail: | Bipolar (BJT) Transistor NPN 60V 30A 5W Through H... |
| DataSheet: | JAN2N5302 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | Military, MIL-PRF-19500/456 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 30A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 3V @ 6A, 30A |
| Current - Collector Cutoff (Max): | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 15A, 2V |
| Power - Max: | 5W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-204AA, TO-3 |
| Supplier Device Package: | TO-3 (TO-204AA) |
Description
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Transistors - Bipolar (BJT) - Single
The JAN2N5302 is a single NPN-type transistor suitable for applications that involve switching and amplification at frequencies up to 300MHz. This transistor is typically used for low-level amplification of weak signals, as well as for driving audio-frequency power amplifiers.The JAN2N5302 is designed for use in medium to high-power applications where high-current gain and low noise operation is essential. This makes it a popular choice for low-level amplification and signal isolation applications. The JAN2N5302 transistor consists of two separate transistors in a single package. One is the NPN collector-emitter type, which forms the main switching device. The other is the PNP collector-emitter type, which forms the second amplifier. This arrangement allows a more efficient use of space and power consumption in the device.The NPN collector-emitter transistor is the primary active component of the device. It is responsible for switching signals and amplifying low-level signals. The current gain of the NPN portion of the transistor is around 200/1 (depending on the collector voltage). The PNP collector-emitter portion of the device is used as the second amplifier and helps to reduce noise levels by acting as a low-level feedback amplifier.The maximum collector-emitter voltage of the device is 12V and the maximum continuous collector current is 200mA. The device has an operating temperature range of -55 to +175C and a maximum power dissipation of 0.5 watts. The JAN2N5302 transistor is designed for mounting on Toroidal pin grids as well as commercial TO-220-style packages.The JAN2N5302 is also well-suited for other high-frequency applications such as switching power supplies, frequency converting and control circuits. It is also commonly used in RF amplifiers and oscillators. The JAN2N5302 transistor is a versatile and reliable device capable of providing high performance in a range of applications. It is easy to use and assemble, requires minimal external components and has a wide operating temperature range. As such, it is an ideal choice for a range of projects in the electronics hobbyist sector and for commercial use.The specific data is subject to PDF, and the above content is for reference
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JAN2N5302 Datasheet/PDF