JAN2N6770T1

Series:	Military, MIL-PRF-19500/543
Packaging:	Bulk
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	500 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	120nC @ 10V
Vgs (Max):	±20V
FET Feature:	--
Power Dissipation (Max):	4W (Ta), 150W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-254AA
Package / Case:	TO-254-3, TO-254AA (Straight Leads)

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The JAN2N6770T1 is an N-channel silicon MOSFET with high power density. It is designed to operate in applications requiring high current, high speed, high voltage and low power dissipation. The device is rated for 65V and offers a very low on-resistance. It is used in applications such as DC-DC converters, audio amplifiers, and switching power supplies, due to its high power density and low on-resistance. It is a popular choice for many applications that require high current and low power.The JAN2N6770T1 is a single N-channel MOSFET. It is based on a standard MOSFET structure and is fabricated from a combination of silicon and silicon dioxide layers. The device is divided into three regions: the source, the drain, and the gate.The JAN2N6770T1 operates on the principle of charge transfer. A voltage applied to the gate region creates an electric field in the channel, which is used to control the flow of electrons from the source to the drain. The amount of current that can be passed through the channel is determined by the gate voltage.As the voltage on the gate increases, the electric field in the channel strengthens, allowing more electrons to flow from the source to the drain. This increase in current is known as the transfer characteristic. The transfer characteristic changes with the operating temperature, and the JAN2N6770T1 is specified to operate from -55 to +175 degrees Celsius.The JAN2N6770T1 is a popular choice for many power electronics applications. It offers high power density, low on-resistance, and high-speed switching. It is suitable for applications including DC-DC converters, audio amplifiers, and switching power supplies.The JAN2N6770T1 has a drain-source breakdown voltage rating of 65V and a maximum drain current of 5A. It has an on-resistance of 0.22 ohms and a maximum gate-source voltage of ±20V. The device also offers a maximum junction temperature of 175°C and an on-state temperature rise of 40°C. The device is available in a plastic TO-220AB package.The JAN2N6770T1 has very low gate charges and switching times and is suitable for high-speed, low-power applications. It can be used to provide precise current control in a range of power electronics applications. The JAN2N6770T1 is an N-channel MOSFET with a high power density and low on-resistance. It is designed for applications requiring high current and high-speed switching and is suitable for use in DC-DC converters, audio amplifiers, and switching power supplies. The device is specified to operate from -55 to +175 degrees Celsius in a plastic TO-220AB package, and offers a maximum drain current of 5A, a maximum gate-source voltage of ±20V, and an on-state temperature rise of 40°C. The JAN2N6770T1 is a popular choice for power electronics applications, offering high power density, low on-resistance, and fast switching times.

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