JAN2N5663 Allicdata Electronics
Allicdata Part #:

1086-16158-ND

Manufacturer Part#:

JAN2N5663

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 300V 2A TO-5
More Detail: Bipolar (BJT) Transistor NPN 300V 2A 1W Through H...
DataSheet: JAN2N5663 datasheetJAN2N5663 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/454
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 400mA, 2A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Supplier Device Package: TO-5
Description

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The JAN2N5663 is a silicon NPN bipolar junction transistor made from a planar epitaxial base. It is a small signal, low power, high gain device specifically designed for use as a preamplifier, mixer, or oscillator in radio frequency, high frequency, and general purpose applications. It is an important component of many electronic systems and is used in a variety of electronic devices such as radios, televisions, telephones, cell phones, computers, and other consumer electronics.

A bipolar junction transistor is a solid-state electronic device whose structure consists of two p-n junctions. These two p-n junctions are arranged back-to-back, one between a base region and an emitter region, and the other between the base region and a collector region. Each p-n junction behaves just like a diode, with current flowing in one direction only, and a voltage drop across it. In a bipolar transistor, the three regions are interconnected in such a way that when current flows from the emitter to the collector, it can be controlled by the amount of current flowing from the base to the emitter.

The JAN2N5663 has a very high gain, which is one of its most important features. The gain of a transistor is the ratio between the current flowing from the collector to the base, and the current flowing from the emitter to the collector. A higher gain means that the transistor can amplify a small signal more effectively. The JAN2N5663 has a gain in the range of 40 to 100. This is significantly higher than other types of transistors, and is the reason why it is so widely used in preamplifier, mixer, and oscillator circuits.

Another important feature of the JAN2N5663 is its low power consumption. This is due to its high gain, which means that it can amplify a signal with less current than a lesser-gain transistor. This makes the JAN2N5663 ideal for applications that require long battery life or low power consumption.

The JAN2N5663 is a very versatile device, and is used in a wide variety of applications. It can be used as an amplifier, mixer, oscillator, or for switching applications. It is also used in many types of communication systems such as radar, navigation, and radio and television broadcasting. The JAN2N5663 is also used in many consumer electronic devices such as cell phones, computers, and gaming consoles.

The JAN2N5663 is a very reliable device, and has undergone extensive testing and certification. It has a long lifetime and can withstand a wide range of temperatures and humidity levels. It also has an excellent breakdown voltage and power dissipation rating, making it suitable for use in many types of applications.

In conclusion, the JAN2N5663 is a silicon NPN bipolar junction transistor designed for use in radio frequency, high frequency, and general purpose applications. It has a very high gain and low power consumption, and is used in many types of communication systems and consumer electronics. It is a very reliable device and has an excellent breakdown voltage and power dissipation rating.

The specific data is subject to PDF, and the above content is for reference

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