JAN2N5684 Allicdata Electronics
Allicdata Part #:

1086-16168-ND

Manufacturer Part#:

JAN2N5684

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 80V 50A TO-3
More Detail: Bipolar (BJT) Transistor NPN 80V 50A 300W Through...
DataSheet: JAN2N5684 datasheetJAN2N5684 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/466
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Current - Collector Cutoff (Max): 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5A, 2V
Power - Max: 300W
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-3 (TO-204AA)
Description

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A bipolar junction transistor (BJT) is a type of transistor that can handle relatively small signals with relatively high power. It is made up of two p-n junctions that are formed at the same time by a single semiconductor material. A BJT works by allowing current to flow across one p-n junction to the other junction.

The JAN2N5684 is a bipolar junction transistor specifically designed for radio frequency applications. It has a low external parts count, is power efficient, and features low harmonics. The JAN2N5684 is specifically designed to generate and control signals within a radio frequency band of 3.2 to 30 MHz. The components within this device can be sized in order to achieve specific requirements.

The JAN2N5684 works in two distinct operational modes. The first mode is called active mode and involves the collector and base current flowing from the collector to the base. This creates a voltage across the base-emitter junction which, in turn, creates the collector-emitter voltage, allowing current to flow across the collector and emitter. This is the most commonly used mode, particularly for radio frequency applications. The second mode is called reverse active mode and is used when the transistor needs to be switched off for a particular purpose. In this mode, the base current is cut off, thus disrupting the flow of current from the collector to the base.

In order to operate the JAN2N5684 its base terminal should be driven with a DC bias voltage initially set to a voltage slightly below the turn-on threshold. This voltage can then be adjusted to change the gain of the device. The collector terminal is then driven with a radio frequency signal, and the transconductance can be adjusted accordingly. Alternatively, the output can be adjusted by changing the base bias voltage of the transistor.

The gain of the JAN2N5684 is typically around 10, meaning that it will reduce the amplitude of the input signal by a factor of 10. It can also provide an excellent signal-to-noise ratio, with the output signal being much louder than the noise in the system. The transistor can also be used as a buffer stage, providing a high impedance to the input and low impedance to the output.

The JAN2N5684 can be used for a variety of radio frequency applications including the generation and control of signals within a 3.2 to 30 MHz band. Other applications include RF amplifiers and oscillators, and radio receiver front-end stages. It can also be used in communications systems such as navigation beacons and military radio transmitters and receivers.

The specific data is subject to PDF, and the above content is for reference

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