JAN2N3585

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JAN2N3585 is a transistor of the type "Bipolar Junction Transistor" (BJT).Bipolar transistors are three-terminal devices composed of two PN junctions, with DC Current Flow from the Collector to the Emitter, controlled by a Base signal applied between the Base and Emitter terminals of the device.

The JAN2N3585 belongs to the "Single" type of BJT transistors family. Single BJT transistors are commonly used in amplifier or switching applications either in combination of two or more transistors or as single transistors.

A single transistor contains four main areas when it is powered, these being: Emitter, Base, Collector and Substrate.

The JAN2N3585 has the following electrical characteristics:

• Collector to Base Breakdown Voltage V_(BR)CBO: 30V
• Collector Cutoff Current I_CBO: 10µA
• Collector to Emitter Breakdown Voltage V_(BR)CEO: 15V
• Emitter to Base Voltage V_EBO: 5V
• Base Emitter Saturation Voltage V_CE: 0.8V
• Collector Emitter Saturation Voltage V_CE: 0.2V
• Gain Bandwidth Product: 100MHz
• Power Rating: 2 Watts
• Operating Temperature: 150°C

The JAN2N3585 can be used in a wide range of applications. It is commonly employed as a switch, output amplifier, as well as for digital logic circuits and low-noise amplifiers. This transistor can conveniently be used as an oscillator and an audio preamplifier with its gain bandwith and power rating in mind.

This type of transistor works fundamentally due to the current flow within its structure. When a voltage is applied to its base, a current flows from the emitter to the collector. This is due to the main mechanism of a BJT, the reverse bias of the base-emitter junction. This causes current to flow through the emitter-collector junction, resulting in greater current flow from emitter to collector.

The JAN2N3585 offers a wide range of advantages in terms of its applications such as low cost, simplicity, and reliability of construction. In addition, its low voltage and low power requirements make it desirable for devices with low energy requirements. Furthermore, the BJT is more robust than other types of transistors and, when constructed properly, shouldn’t require much maintenance in order to continue working properly.

Overall, the JAN2N3585 is a well-rounded device that is suitable for a wide variety of projects. It is capable of handling large amounts of current, making it suitable for power amplifiers and digital logic circuits. Furthermore, its size and price make it an attractive option for low-voltage and low-power applications, as well as those requiring switch-like functionality. Finally, its reliability makes it a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference