MJD41CRLG Discrete Semiconductor Products |
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Allicdata Part #: | MJD41CRLGOSTR-ND |
Manufacturer Part#: |
MJD41CRLG |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 6A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.75W Su... |
DataSheet: | MJD41CRLG Datasheet/PDF |
Quantity: | 1000 |
1800 +: | $ 0.20089 |
3600 +: | $ 0.18205 |
5400 +: | $ 0.16950 |
12600 +: | $ 0.16740 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 600mA, 6A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 3A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD41 |
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MJD41CRLG is a type of bipolar junction transistor or BJT. It is a single transistor, which means it has three connections – the collector, the base, and the emitter connected to respective terminals in the transistor package. The collector is the region that feeds current from the BJT to the load, whereas the base and the emitter are used for controlling the flow of current between the collector and the emitter.
The working principle of MJD41CRLG can be described as the combination of two different physical effects: the conduction of electrons in the transistor’s collectemitter region, and the injection of electrons into the base region. When a positive voltage, known as the bias, is applied across the collector and the emitter, the high potential difference that is created allows the conduction and injection of electrons between the two terminals. During this process, the electrons in the collector-emitter region travel through the base region in order to reach the collector terminal, thus allowing current to flow without interruption. Meanwhile, the electrons that are injected into the base region are several times larger in number than those traveling in the collector-emitter region, hence allowing for a significantly higher level of current in the collector-emitter region.
MJD41CRLG transistors are used in several different fields, including power supplies, consumer electronics, and automotive sectors. In power supplies, for example, BJTs are typically used to regulate the output voltage by switching on and off the power supply based on the input voltage. Similarly, in consumer electronics, BJTs are often used as logic elements in integrated circuits, as they are capable of switching between logic levels with high speed and accuracy. Additionally, they are also used in automotive systems to control signals and switching events within the vehicle.
The advantages of using MJD41CRLG transistors include their relatively low cost, their low power dissipation (which makes them suitable for use in battery powered applications), and a high packing density, which allows for more transistors to be integrated onto a single chip. Furthermore, they are also quite tolerant to variation in temperature, meaning they can maintain their accuracy and performance even in environments with extreme temperature variations.
Therefore, the MJD41CRLG is an ideal choice for applications that require accurate switching and control, such as those found in power supplies, consumer electronics, and automotive sectors. Its relatively low cost, low power dissipation, and high packing density make it an ideal transistor for applications that require accurate switching and control. As such, it is an excellent choice for use in these applications.
The specific data is subject to PDF, and the above content is for reference
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