MJD47T4G Discrete Semiconductor Products |
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Allicdata Part #: | MJD47T4GOSTR-ND |
Manufacturer Part#: |
MJD47T4G |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 250V 1A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 250V 1A 10MHz 1.56W S... |
DataSheet: | MJD47T4G Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.14150 |
5000 +: | $ 0.13237 |
12500 +: | $ 0.12324 |
25000 +: | $ 0.12172 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 1A |
Current - Collector Cutoff (Max): | 200µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 300mA, 10V |
Power - Max: | 1.56W |
Frequency - Transition: | 10MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD47 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MJD47T4G is a high-power, high-efficiency bipolar transistor meant to be used as a switching device in various systems. It is a single, field-effect transistor (FET) that is capable of providing high levels of performance in applications with an operating voltage of up to 200 V and peak power dissipation of up to 500 W. Due to its low on-resistance and high frequency operation, it is popular in the audio, consumer electronics, and power management industries.
The transistor is suitable for a wide range of projects and applications, including power management, audio amplifiers, consumer electronics, and robotics. Its design allows it to withstand high-frequency switching, making it ideal for use in high-power audio amplifiers, power converters, and data converters.
The MJD47T4G is known for its low harmonic distortion, fast switching time, and high power efficiency. It is capable of handling up to 30 A DC, with a low gate-source threshold voltage of 0.4 V. It is an ideal choice for projects that require high speed operation and good performance in a compact package.
The working principle of the MJD47T4G is simple: an applied bias voltage creates an electric field within the device, which modulates the flow of current that passes between two terminals. When the gate-source voltage exceeds the threshold voltage, the transistor is turned on, allowing current flow. When the gate-source voltage is below the threshold voltage, the transistor is turned off and no current will flow.
The MJD47T4G is an excellent device for a variety of applications thanks to its ability to operate efficiently and accurately at high frequencies while consuming minimal amounts of power. It is designed with a high power-dissipation rating and low on-resistance, making it an ideal choice for projects that require reliable performance in a compact package.
The MJD47T4G is a versatile device that is well suited for a wide range of projects and applications. Its efficient operation and high power-dissipation rating make it an ideal choice for audio amplifiers, consumer electronics, and power management systems. Additionally, its fast switching time and low harmonic distortion make it an excellent choice for use in high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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