MJD44H11TF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 4A, 1V
Power - Max:	1.75W
Frequency - Transition:	50MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	TO-252-3
Base Part Number:	MJD44H11

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Introduction

MJD44H11TF is an NPN transistor designed for applications such as switching, amplifying and interfacing with low power logic circuits. It is a part of the bipolar junction transistor (BJT) family from ON Semiconductor, which provides low voltage, low power switching operations with the added benefit of high speed operations. The transistor is available in a through-hole outline and is a singlepole device. The MJD44H11TF can handle a maximum power dissipation of 0.73 Watt, at a voltage of 12 Volts.

Features

The MJD44H11TF has a number of features which makes it an ideal choice for switching and interfacing applications. Some of these features include: • Low voltage, low noise and low power dissipation • High switching speed • High current gain • High forward current transfer ratio • Low silicon material cost • Comprehensive technical support • High thermal stability • High reliability • Wide temperature range of operation • Excellent Thermal Shock Performance

Application Field

The MJD44H11TF is designed for applications such as switching and amplifying of high current and low power analog and digital signals. The transistor can be used in audio amplifying circuits, such as in commercial and consumer audio amplifiers, such as mixers and equalizers, since it has a low noise level. The transistor is also suitable for switching applications, such as relays and low power control circuits. The high current gain and wide temperature range of operation make it ideal for applications which require high speed switching operations. The low power dissipation and excellent thermal shock performance make it well suited for applications which require highly reliable performance while switching high currents.

Working Principle

The MJD44H11TF is a bipolar junction transistor (BJT), which relies on the “collector to emitter” voltage that is applied to the base control terminal of the transistor. This voltage, also referred to as the “base-emitter” voltage, controls the “collector-emitter” current. This current, in turn, is proportional to the voltage applied to the base terminal of the transistor. When the base-emitter voltage increases, the collector-emitter current increases exponentially. When the voltage applied to the base terminal is removed, this current decreases exponentially. The transistor also features a high forward current gain and an excellent thermal shock performance for fast switching operations. This transistor is designed with a low power dissipation and high thermal stability in order to ensure reliable operation even at high temperatures. It also features a wide temperature range of operation, which makes it suitable for applications where high temperatures may be experienced.

Conclusion

Overall, the MJD44H11TF is an ideal choice for any low voltage and low power applications where a transistor is required. Its features such as low noise, wide temperature range of operation and high reliability make it the perfect choice for a variety of applications such as switching, interfacing, and amplifying. Its low power dissipation and excellent thermal shock performance make this transistor an ideal choice for applications where high current switching operations are required.

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