MJD44E3T4G Discrete Semiconductor Products |
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Allicdata Part #: | MJD44E3T4GOSTR-ND |
Manufacturer Part#: |
MJD44E3T4G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 80V 10A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 10A ... |
DataSheet: | MJD44E3T4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.15443 |
5000 +: | $ 0.14378 |
12500 +: | $ 0.14200 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 20mA, 10A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 5A, 5V |
Power - Max: | 1.75W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD44 |
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The MJD44E3T4G is a transistor belonging to the group of bipolar junction transistors (BJT). Bipolar transistors are current-controlled devices often used in electronic circuits to amplify or switch electronic signals or electrical power. The MJD44E3T4G is a type of single transistor which is used as a switching device in electronic circuits and systems. As such, it is widely used in applications such as telecommunications, automotives and consumer electronics.
The MJD44E3T4G is designed to be configured as an NPN bipolar transistor. It is composed of three layers consisting of two n-type doped silicon material and one p-type doped silicon material. This configuration allows for a high current gain, a wide operating range, a high power dissipation capability, and a low voltage drop due to the transistor\'s high breakdown voltage.
A bipolar transistor works by controlling the flow of current through a circuit. When the base voltage is low, the transistor acts as an open switch, allowing no current to flow from collector to emitter. When the voltage is increased, the transistor turns on and current begins to flow. This action is known as switching. The transistor\'s current gain is determined by the amount of voltage applied to the base.
When the voltage applied to the base is low, a small amount of current will flow through the transistor, resulting in a low power output. As the base voltage is increased, the current gain also increases, resulting in a higher power output. By controlling the base voltage, it is possible to control the amount of current flow in the circuit and thereby control the power output.
The MJD44E3T4G is widely used in many consumer electronics, telecommunications, and automotive applications. It is often used as a switching device, allowing the power and direction of current flow to be controlled in a circuit. This can help to extend battery life and reduce heat dissipated from the system, as well as providing an efficient way to control the current in a circuit.
In addition to its use as a switching device, it can also be used as an amplifying device. When used as an amplifying device, the MJD44E3T4G is able to increase the power output of a circuit. This is done by taking a small input signal and increasing its power output. This can be used to amplify signals to a desired level and is often used in communications or audio applications.
The MJD44E3T4G is a versatile semiconductor device that is used in many applications. From switching to amplifying, it is used to control the power and current in a circuit. Its current gain and wide operating range provide an efficient way to control the power output of a system, helping to reduce battery usage and reduce heat dissipated from the system.
The specific data is subject to PDF, and the above content is for reference
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