MJD44H11T4-A Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 4A, 1V
Power - Max:	20W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Base Part Number:	MJD44H11

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For those looking to utilize a single bipolar junction transistor (BJT) in their application, the MJD44H11T4-A transistor is one of the most dependable products available in the market. With its outstanding reliability and high frequency performance, it is particularly suitable for power amplifiers and switching applications. In this article, we will discuss the application field and working principle of the MJD44H11T4-A transistor.ApplicationsThe MJD44H11T4-A features various features that make it suitable for a range of applications, particularly power amplifiers and switching, making it one of the most popular devices of its type in the market. With its exceptional breakdown voltage of 190V and low saturation voltage of - 0.75V, it is particularly suitable for applications where a lot of power needs to be handled and can provide reliable results even under long-term use.In addition to its performance and reliability, the MJD44H11T4-A also features a low turn-on time of just 3 microseconds and a low turn-off time of 10 microseconds, making it suitable for high-speed switching applications such as switching power supplies and motor control. Due to its high current handling capacity, it can also be used in power amplifiers with excellent results.Working PrincipleThe MJD44H11T4-A is a single-transistor bipolar junction transistor (BJT). It is composed of three major components: a base, an emitter and a collector. In its normal state, the transistor is the OFF state, meaning the current flow between the collector and the emitter is blocked. When a current or voltage is applied to the base of the transistor, it will cause the current to flow between the collector and the emitter, turning the transistor ON. As long as the base current or voltage is maintained, the current will continue to flow, allowing the transistor to remain in this state.The current gain of the MJD44H11T4-A is what determines its performance in amplifiers and switching applications. The current gain, also referred to as the β or hFE value, is a measure of how efficiently the transistor can amplify the base current in order to increase the collector current. The MJD44H11T4-A has a current gain of 300, making it highly efficient in amplifying signals and controlling power outputs.The MJD44H11T4-A is also notable for its ability to withstand large voltage spikes. This is known as the collector-emitter breakdown voltage and it is the largest voltage that can be applied to the transistor from the collector to the emitter before the device breaks down. The MJD44H11T4-A transistor has an exceptionally high breakdown voltage of 190V, making it suitable for high-voltage applications.ConclusionThe MJD44H11T4-A is one of the most popular single bipolar junction transistors (BJT) available in the market, with its reliable performance and high frequency performance making it particularly suitable for power amplifiers and fast switching applications. With its low saturation voltage, high current gain, and excellent breakdown voltage, it is one of the most dependable transistors of its type.

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