MJD41CT4 Discrete Semiconductor Products |
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Allicdata Part #: | MJD41CT4OSCT-ND |
Manufacturer Part#: |
MJD41CT4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 6A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 100V 6A 3MHz 1.75W Su... |
DataSheet: | MJD41CT4 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 600mA, 6A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 3A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD41 |
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MJD41CT4 is a type of bipolar junction transistor (BJT). Its main function is to act as a switch or amplifier for large current flow between two terminals. It is often used in switching, amplification and oscillator applications, as well as in linear power supplies. This article will discuss the application field and working principle of this transistor.
The MJD41CT4 is a high-power NPN transistor. It has an operating voltage range up to 100 V and a typical collector current up to 10 A. It can be widely used in power switch, inverter, relay-driver, audio amplifier and high-voltage switching applications. The threshold voltage range of the transistor makes it suitable for use in high-voltage circuits. It also has higher breakdown voltage than an ordinary NPN transistor, making it suitable for applications where higher voltage is required.
The working principle of the MJD41CT4 is based on the basic operation of a bipolar junction transistor (BJT). The transistor consists of two p-n junctions that form the base-emitter-collector electrodes. When a voltage is applied to the base electrode, it opens the p-n junction, allowing current to flow between the collector and emitter electrodes. This current can be controlled by varying the base voltage accordingly. The current gain of the transistor is determined by the ratio of the collector current to the base current.
As far as the applications are concerned, the MJD41CT4 can be used in switching, amplification, and oscillator applications. It is compatible with both AC and DC signals, making it highly suitable for applications such as relays, switching power supplies and telecommunication. The high breakdown voltage and current gain of the transistor make it capable of handling large current flow with little voltage drops. It can also be used as an amplifier in audio and radio applications.
The MJD41CT4 is a versatile bipolar junction transistor with a wide range of applications. It\'s high power rating, low voltage drop and wide voltage range make it suitable for a variety of applications such as in power supplies, motor control and switching circuits. Its two p-n junctions allow easy control of large current flow and its current gain ratio makes it suitable for amplification applications. The MJD41CT4 is thus an ideal choice for many high-power applications.
The specific data is subject to PDF, and the above content is for reference
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