Allicdata Part #: | MJD45H11TFTR-ND |
Manufacturer Part#: |
MJD45H11TF |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 8A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 80V 8A 40MHz 1.75W Su... |
DataSheet: | MJD45H11TF Datasheet/PDF |
Quantity: | 16000 |
2000 +: | $ 0.19654 |
6000 +: | $ 0.18298 |
10000 +: | $ 0.18072 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 400mA, 8A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 4A, 1V |
Power - Max: | 1.75W |
Frequency - Transition: | 40MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-3 |
Base Part Number: | MJD45H11 |
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MJD45H11TF is a transistor device that belongs to the class of transistors known as Bipolar Junction Transistors (BJT). This particular device is classified as a single bipolar junction transistor which utilizes two p-n junctions. This two junction formula is the basic structure of a BJT device.
Bipolar Junction Transistors are used in a wide range of applications ranging from audio amplifiers and digital signal processing (DSP) to power transistors. Being a single BJT, the MJD45H11TF typically finds use in small signal applications such as those found within oscillators and signal switching circuits. The most common application of the MJD45H11TF transistor is usually found in the basic transistor inverter circuit.
The MJD45H11TF transistor follows the basic working principle of the BJT where current comprises a central part of the operation. The working principle of a BJT relies heavily on the flow of electron current through it. When a voltage is applied to the base of the transistor, electrons are attracted to the base and then are repelled away from the emitter and collector. This will then cause the transistor to become an open or closed switch in the circuit, thus allowing or disallowing the current flow in the circuit.
The specific parameters which make up the MJD45H11TF transistor are what determine its performance in applications. The common measurements of the MJD45H11TF include a collector-emitter voltage of 40 V, an emitter-base voltage of 5 V, and a collector current of 600 mA. These measurements are used to determine the proper working and safety conditions in which the MJD45H11TF can successfully operate.
The performance of the MJD45H11TF also depends upon the construction of the device. The MJD45H11TF uses two p-n junctions which are connected in series with a detection diode. This diode helps to improve the on/off ratio of the transistor when compared to a regular single BJT and helps to keep it stable under varying conditions. In addition, the device also features a ceramic heat sink which helps to keep the device’s performance in check and provide protection from damaging heat.
Due to its wide range of applications and solid construction, the MJD45H11TF is a popular choice among designers and engineers. The MJD45H11TF is an easy to implement device within circuits and its versatility has allowed it to be utilized in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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