MJD45H11-1G Allicdata Electronics
Allicdata Part #:

MJD45H11-1GOS-ND

Manufacturer Part#:

MJD45H11-1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 80V 8A IPAK
More Detail: Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Th...
DataSheet: MJD45H11-1G datasheetMJD45H11-1G Datasheet/PDF
Quantity: 5229
Stock 5229Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 1.75W
Frequency - Transition: 90MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Base Part Number: MJD45H11
Description

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MJD45H11-1G is a single, bipolar junction transistor (BJT) designed for low-noise and high current amplification. The device is often used in voice-frequency applications, including radio receivers and audio amplifiers.

The MJD45H11-1G includes three layers of semiconductor material, with each layer containing two discrete contacts. Together, these three layers make up the device’s base-emitter-collector configuration. The base is supplied with a low-voltage signal, and the current flows from the emitter to the collector. The device is able to amplify this signal by controlling the base-emitter voltage, which allows for a larger voltage and current gain across the collector-emitter output.

The operating conditions of the MJD45H11-1G must be carefully controlled in order to maintain reliable operation. This includes the collector voltage, the base current, and the base-emitter junction voltage. In addition, the device must be operated at a temperature within its specified range and must be protected from electrical surge, mechanical shock, and extreme vibration.

The MJD45H11-1G is commonly used in a variety of consumer electronics applications. Its low noise characteristics make it ideal for use in radio receivers, where it can amplify small input signals to produce a larger and clearer output. It can also be used in audio amplifiers to boost signals that have become weak or distorted due to long transmission distances.

The MJD45H11-1G is also used in digital systems, such as microcontroller and logic devices. Here, the device is used to amplify and control digital signals, allowing for more precise control over the device’s action. In addition, the device can be used in conjunction with other transistors and components to create more complex circuits.

Finally, the MJD45H11-1G is often used in automotive applications. In an automobile, the device is used to amplify signals from sensors and other components. This allows the on-board computer to precisely monitor a wide range of engine parameters and provide more efficient fuel consumption.

To conclude, the MJD45H11-1G is a single, bipolar junction transistor designed for low-noise and high current amplification. The device is used in consumer electronics, digital systems, and automotive applications, and can be used to create more complex circuits. Care must taken when operating the device, as proper conditions must be maintained in order for it to operate correctly.

The specific data is subject to PDF, and the above content is for reference

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