MJD44H11T5G Discrete Semiconductor Products |
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Allicdata Part #: | MJD44H11T5GOSTR-ND |
Manufacturer Part#: |
MJD44H11T5G |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 80V 8A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 80V 8A 85MHz 1.75W Su... |
DataSheet: | MJD44H11T5G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.15337 |
5000 +: | $ 0.14280 |
12500 +: | $ 0.14103 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 400mA, 8A |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 4A, 1V |
Power - Max: | 1.75W |
Frequency - Transition: | 85MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD44H11 |
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The MJD44H11T5G is a Darlington Bipolar NPN Silicon Junction Transistor which belongs to the single transistors bipolar BJT family. It is mainly used for a variety of circuits that require low frequency amplification.
The MJD44H11T5G is designed for linear amplification. It is composed of three terminals, namely collector, emitter and base, and uses NPN biasing. This type of transistor is mainly used as a switch to activate or deactivate other components in the circuit by modulating the electric current flow. It pulls the collector close to the emitter, thereby turning the device off. When voltage is applied to the base, it increases the current to the collector, thus turning the transistor on.
The MJD44H11T5G is used in several applications. It can be used as a preamplifier or as a switch in radios, computer modems, alarm systems, and automotive circuits. Additionally, it can be used as a buffer, amplifier, and amplifier switch. It is also used to solve logic problems and build logic circuits.
The working principle of the MJD44H11T5G is relatively simple. It has the ability to control the electric current between its collector and emitter terminals by modulating the current to the base terminal. By controlling the voltage applied to the base, the current flow through the device will be regulated, thus allowing the device to turn on and off depending on the control signal.
When no voltage is applied to the base terminal, the device is off; this is referred to as cut-off. When a voltage of Vcc is applied to the base, the transistor turns on and is in its saturation state. In this state, the emitter and collector are shorted, and the device is capable of carrying the maximum current. This is referred to as the saturated state. When the base voltage is increased beyond Vcc, the transistor is in its switching state. In this state, the transistor is able to switch between its on and off states at faster speeds.
In conclusion, the MJD44H11T5G is a single bipolar transistor that is mainly used for low frequency amplification. It works by controlling the electric current between its collector and emitter terminals through modulation of the current to the base terminal. The device has a variety of applications and can be used for preamplifiers, switches, logic problems and logic circuits. As a result, the MJD44H11T5G is a versatile device that is used in many different projects.
The specific data is subject to PDF, and the above content is for reference
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