MJD42C Allicdata Electronics
Allicdata Part #:

MJD42C-ND

Manufacturer Part#:

MJD42C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 6A DPAK
More Detail: Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Su...
DataSheet: MJD42C datasheetMJD42C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Power - Max: 1.75W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD42
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MJD42C is a type of single bipolar junction transistor (BJT) device, which has extensive usage in a variety of applications. It is a medium-power transistor device that has a number of unique features. These include superior primary breakdown characteristics, a wide temperature operating range and low input capacitance. It is also one of the few devices that are suitable for high-power transistor applications.

MJD42C has a low voltage, low current and high-temperature operating range. It is suitable for power transistor application up to 1.5KW. As a result, it can be used in a variety of medium-power applications, such as high-fidelity audio power amplifiers, high-speed motor control, and medium-power industrial control.

The basic working principle of the MJD42C is relatively simple. It consists of an emitter, a collector, and a base. The emitter is the source of electrons and the collector is the destination for them, while the base is the control element for controlling the flow of electrons.

The operating principle of the MJD42C is based on the physical principle that states that the current flow between two different points is proportional to the applied voltage between them. This is known as Ohm\'s law and is very significant in the operation of any transistor device. When a voltage is applied to the base, the base-emitter junction becomes active, which in turn allows electrons to flow from the emitter to the collector and out of the device.

The MJD42C has a high input impedance, which allows it to be used in a variety of applications including switching circuits, audio amplifiers, voltage references, and in motor control circuits. It is also commonly used in high-power applications such as power control modules and power amplifiers.

The MJD42C also has good heat dissipation characteristics, allowing it to operate at higher temperatures. This is important in higher power applications where the heat generated by the device has to be dissipated. It also has a wide temperature operating range of -55°C to 125°C. This makes it suitable for a variety of applications.

Overall, the MJD42C is a versatile transistor device that is suitable for a variety of applications. It has a low voltage, low current, and high-temperature operating range, making it suitable for medium-power applications. It also has a wide temperature operating range, making it suitable for a variety of high-power applications. Additionally, the device has good heat dissipation characteristics, which make it suitable for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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