Allicdata Part #: | MJD42CRL-ND |
Manufacturer Part#: |
MJD42CRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 6A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Su... |
DataSheet: | MJD42CRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 600mA, 6A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 3A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD42 |
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MJD42CRL, which stands for Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Discrete Rectifier, is a single bipolar junction transistor (BJT) type transistor. It is typically used for low-power switching applications, such as DC to AC converters, low-power motor control, and audio amplification, and has a number of advantages over other BJT types in these applications.
A BJT is an intrinsic semiconductor device built on a three-terminal structure, consisting of three regions: the base, the emitter, and the collector. When the base-emitter junction is forward-biased, current may flow between the collector and the emitter. This current can be amplified by raising the base voltage and the resulting current can be used to control another circuit. The collectors and the emitter are essential in this working principle, while the base is used to switch the device between an on and off state.
The MJD42CRL is a NPN (negative-positive-negative) transistor and is built on an integrated circuit (IC). Its three terminals are labeled as the collector (C), the base (B), and the emitter (E). Its collector-emitter voltage (Vce) is up to 30 V and its collector current (Ic) is up to 100 mA. This transistor is relatively small and low in power consumption compared to other BJTs, making it suitable for low-power applications.
In terms of application field, the MJD42CRL has a wide range. It can be used in various kinds of low-power switching applications, such as DC to AC converters, low-power motor control, audio amplification, and other switching and general purpose applications. It is due to the combination of its superior gain-bandwidth product and its low power consumption.
The working principle of the MJD42CRL is based on the well-known principles of a BJT, which is explained above. As previously mentioned, it is a NPN type transistor, with the collector attached to the emitter through a forward-biased base-emitter junction. When current flows through the base-emitter junction, it creates a voltage which is amplified by raising the base voltage. This amplified current can then be used to control another circuit.
The MJD42CRL is capable of switching quickly, since its gain-bandwidth product is relatively high. This makes it suitable for high-frequency applications, where it can quickly switch between two circuits. It is also capable of providing very strong switching currents, making it suitable for driving high-power loads. Its low power consumption also makes it suitable for battery operated applications, such as laptops and other portable devices.
Overall, the MJD42CRL is an effective single transistor suitable for low-power switching applications, due to its superior gain-bandwidth product, low power consumption and relatively small size. It sells at a relatively low price, making it attractive to those on a budget. Its wide range of low-power applications means it can be used in a multitude of applications, making it a versatile component.
The specific data is subject to PDF, and the above content is for reference
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