MJD44H11T4 Allicdata Electronics

MJD44H11T4 Discrete Semiconductor Products

Allicdata Part #:

497-2504-2-ND

Manufacturer Part#:

MJD44H11T4

Price: $ 0.16
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 80V 8A DPAK
More Detail: Bipolar (BJT) Transistor NPN 80V 8A 20W Surface M...
DataSheet: MJD44H11T4 datasheetMJD44H11T4 Datasheet/PDF
Quantity: 1000
1 +: $ 0.16000
10 +: $ 0.15520
100 +: $ 0.15200
1000 +: $ 0.14880
10000 +: $ 0.14400
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Power - Max: 20W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD44H11
Description

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The MJD44H11T4 is a single, bipolar transistor device. It is part of the larger family of transistors called NPN devices, where N stands for "negative" and P stands for "positive". In other words, the MJD44H11T4 is a three terminal device, with a control gate, drain and source.

The MJD44H11T4 is widely used in electronics, communications and automotive applications, primarily for switching and amplification purposes. Its wide use is due to the varying breakdown voltages, current gain and power-handling capabilities it can provide. As it is an NPN transistor, current flows through the device from its source to its drain when a positive voltage is applied to the base. Additionally, the base to collector breakdown voltage is typically 12V, making this device particularly well-suited for switching applications.

Some of the typical applications in which the MJD44H11T4 is used include audio amplifiers, modems, power control circuits, voltage regulators, inverters and amplifiers. Additionally, this device may be used in circuits which require a high breakdown voltage or high current gain. For example, it is often used in automotive, industrial and medical electronic circuits, due to its robust nature.

Apart from its wide list of capabilities, some other notable characteristics of the MJD44H11T4 include its low thermal resistance, a fast switching speed, low noise and high input impedance. This device typically operates at temperatures between -65 to +150°C.

Due to its robust nature, the MJD44H11T4 is also well-suited for applications which cannot accommodate more complex devices. Aside from its wide range of applications, this device is also relatively cost-effective as compared to other similarly-rated devices in its family.

The working principle of the MJD44H11T4 is based on the NPN structure, where current is allowed to flow from its source to its drain when a positive voltage is applied to the base. When the base to emitter voltage is greater than 0.6V, current enters the base and increases exponentially until the current through the base and emitter become equal. This creates a voltage across the collector which is amplified compared to the input. This is the basic principle of how this device works and explains how this device is used in amplifying and switching applications.

In conclusion, the MJD44H11T4 is a single, bipolar transistor device with a wide array of applications, ranging from audio amplifiers to modems to voltage regulators. Its wide range of capabilities make it suitable for high-voltage and power-handling applications. Its working principle is based on the control of current flow from the source to the drain by applying a positive voltage to the base.

The specific data is subject to PDF, and the above content is for reference

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