MJD45H11T4G Discrete Semiconductor Products |
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Allicdata Part #: | MJD45H11T4GOSTR-ND |
Manufacturer Part#: |
MJD45H11T4G |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 80V 8A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Su... |
DataSheet: | MJD45H11T4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.17150 |
5000 +: | $ 0.15967 |
12500 +: | $ 0.15770 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 400mA, 8A |
Current - Collector Cutoff (Max): | 1µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 4A, 1V |
Power - Max: | 1.75W |
Frequency - Transition: | 90MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD45H11 |
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The MJD45H11T4G is a popular bipolar junction transistor (BJT) used mainly in consumer applications and in general purpose switching. It is a single-stage (or single-device) circuit that is composed of a base, a collector, and an emitter. It is constructed using a thin semiconductor layer between the base and the collector, with a layer of insulating material, such as silicon dioxide, between the collector and the emitter, forming the junction that gives the transistor its name. The basic purpose of the transistor is to control the current flow from the collector to the emitter. This allows the transistor to be used in electronic circuits for many purposes.
The MJD45H11T4G is a NPN (negative-positive-negative) transistor, which means it has a negatively-charged base, a positively-charged collector, and a negatively-charged emitter. It is capable of amplifying a small current from the base to the collector, and then from the collector to the emitter, even when the base current is very small. This amplification feature has enabled transistors to be used in many digital and analog applications.
The MJD45H11T4G has many important features that make it useful in consumer applications, including a low power consumption, high switching speed, low noise, and high voltage. Because of these features, the MJD45H11T4G is ideal for use in many consumer applications such as digital cameras and cell phones. It is often used in digital logic circuits to switch current on and off, and it can be used in analog circuits to amplify or buffer a signal.
The MJD45H11T4G is a versatile device that can be used in different types of applications. In digital circuits, it can be used to create logic gates such as AND, OR, and XOR. In addition, it can be used as a level shifter, a pulse stretcher, a flip flop, or a clock. In analog circuits, it can be used to amplify audio signals, control the gain of an amplifier, and even create low pass or band pass filters.The working principles behind the MJD45H11T4G are relatively simple. When the base of the transistor receives a small current, it will allow some of the applied current to flow from the collector to the emitter, amplifying the initial current. By controlling the amount of current to the base, the transistor will decide how much current will be allowed to pass from the collector to the emitter. This amplification is what makes transistors so useful in a wide range of electronic circuits.
The MJD45H11T4G is a popular and versatile transistor with many uses in both analog and digital applications. It is capable of amplifying a small current from the base to the collector and the emitter, allowing it to be used in many types of circuits. A fundamental understanding of the working principles of this device is important to understand how to make the most of it in applications.
The specific data is subject to PDF, and the above content is for reference
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