MJD47T4 Discrete Semiconductor Products

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The MJD47T4 is a type of bipolar junction transistor (BJT) designed specifically for medium- and high-power switching in a variety of applications. It is a single-transistor device, which means a single PN junction is used to control the current flow between its two terminals. This allows it to operate at higher currents than commonly used BJTs and also reduce the amount of power dissipated in the form of heat.

The MJD47T4 is well-suited for applications such as motor speed control, relay drivers, temperature controllers, power converters, and power amplifier designs. It is also used in DC-DC converters, current sources, and other circuits that require high-power switching. The device\'s high voltage rating makes it suitable for automotive applications, and its low current consumption makes it suitable for battery-powered systems.

The transistor\'s working principle is based on the phenomenon of minority carrier injection. When a voltage is applied across the transistor\'s base-emitter (BE) junction, a small amount of current begins to flow through the junction due to the injection of minority carriers from the base region into the collector region. This current is referred to as the "base injector current" or "BE current." This BE current produces a voltage drop across the transistor\'s collector-emitter (CE) junction that is proportional to the BE current. The resulting CE voltage drop is known as the transistor\'s "collector-emitter voltage", or "Vce".

When the base injector current is increased, so is the collector-emitter voltage. As the Vce voltage increases, so does the transistor\'s current gain, which is the ratio of collector current to the base current. Thus, by controlling the base injecting current the collector current can be accurately regulated, allowing the MJD47T4 to switch high currents and provide precise control of a device\'s power output.

The MJD47T4\'s construction consists of two back-to-back NPN and PNP transistors on a single chip, with each transistor connected to its respective collector, base and emitter connections. The device is available in a number of package types and sizes, from TO-220 and SOT-223, to SOT-89 and TO-263. It also has a wide operating voltage range of -55 volts to +250 volts and a maximum continuous power dissipation rating of 5 watts. Furthermore, the MJD47T4 has a high collector-emitter breakdown voltage rating of 700 volts and a high collector-emitter saturation voltage of 0.5 volts.

In conclusion, the MJD47T4 is an ideal choice for medium- and high-power switching applications due its high voltage and current ratings, low current consumption, and precise switching capabilities. Its popularity among power amplifiers, power converters, and motor controls, as well as its ease of use, make it a popular transistor of choice.

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