Allicdata Part #: | MJD42CGOS-ND |
Manufacturer Part#: |
MJD42CG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 6A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 100V 6A 3MHz 1.75W Su... |
DataSheet: | MJD42CG Datasheet/PDF |
Quantity: | 900 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 600mA, 6A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 3A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD42 |
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MJD42CG is a high power transistor that specifically caters to voltage amplification. It is a bipolar junction transistor (BJT) specifically categorized under Single transistors. Its main feature is low saturation voltage accompanied by low collector-emitter saturation voltage. This helps in delivering the power supply at higher voltage level with minimum power consumption.
MJD42CG is a multifunctional, dependable and affordable device that can be used for any kind of power amplification applications. As it is a single transistor, it can be easily mounted on any PCB due to its small size and it can handle large amounts of power thereby eliminating the need of additional transistors. MJD42CG transistor can be used in various applications such as power amplifiers, power supplies, regulators, and general-purpose switching uses.
The MJD42CG is designed using Bipolar junction Technology (BJT) which consists of two diodes that are placed in parallel. This in turn creates a three terminal device where the two diodes act as two separate collectors with a shared base terminal. When voltage is applied to the collector terminal, this causes current flow to the shared base terminal. This in turn causes the two diodes to conduct with equal amounts of current flowing through them. The addition of this process amplifies the current and hence increased power output is obtained.
The MJD42CG transistor has two main features – Collector-Emitter Voltage (VCE) and Base-Emitter Voltage (VBE). The MJD42CG transistor offers low VCE and this prevents the overload of the device. The low base voltage also helps to increase the efficiency of the device. This transistor also has a low transistor gain and this helps to control the power output from the device.
The MJD42CG works on the principle of Bipolar Junction Technology (BJT). When voltage is applied to one of the two collectors, current flows through the shared base and then flows through the other collector. This causes the two diodes to conduct and the output of the device is generated by the sum of current flowing through both the collectors. The greater the sum of current, the higher the output power. Moreover, the base current that is injected into the base terminal is also amplified, thereby increasing the overall output of the device.
The MJD42CG is an ideal power amplifier transistor as it offers low saturation voltage, low collector-emitter saturation voltage, has a low collector-emitter leakage current, and requires minimal power input. It can be used for many applications such as for audio amplification and for switching applications due to its low voltage, low gain, and high power output capabilities. In addition, the long life of the MJD42CG device makes it ideal for many high power applications such as motor drives, amplifiers, and regulators.
The specific data is subject to PDF, and the above content is for reference
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