MMBF4117 Discrete Semiconductor Products |
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Allicdata Part #: | MMBF4117TR-ND |
Manufacturer Part#: |
MMBF4117 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 40V 0.225W SOT23 |
More Detail: | JFET N-Channel 40V 225mW Surface Mount SOT-23-3 |
DataSheet: | MMBF4117 Datasheet/PDF |
Quantity: | 21000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 30µA @ 10V |
Voltage - Cutoff (VGS off) @ Id: | 600mV @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 3pF @ 10V |
Power - Max: | 225mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBF4117 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MMBF4117 is a type of Junction Field Effect Transistor (JFET), and has multiple applications in different fields. In this article, we shall discuss the working principle of MMBF4117 and its various applications.
In simple terms, MMBF4117 is a voltage-controlled device whose working is based on the Electrochemical Potential of a p-n junction. The working principle of MMBF4117 is based on the phenomenon of a depletion region, where charges are depleted from the region around the p-n junction. This creates an electric field near the junction, which controls the conduction of electrons across the junction.
The MMBF4117 contains two p-n junctions - Source and Drain. Between these two junctions, there is a Gate region. When a positive voltage is applied to the Gate region, the electron density in that region increases. This increases the electric field in the channel region of the MMBF4117, which increases the current flow through the junction. Conversely, when a negative voltage is applied to the Gate region, the electron density decreases and the electric field in the channel region of the MMBF4117 reduces. This reduces the current flow through the junction.
MMBF4117 is used in a variety of applications, including amplifiers and oscillators.MMBF4117 can also be used in amplifying signal in audio applications. Its low noise, low power consumption and low drift makes it very suitable for audio applications.MMBF4117 can be used to build voltage references, voltage regulators and voltage dividers. Its low on-resistance and high gate sensitivity leads to higher performance and higher switching speed, making it suitable for many digital applications.
MMBF4117 is extensively used in telecommunications, consumer electronics and industrial control applications. It is also found in logic gates, multiplexers, high speed switches and interface circuits, due to its low input capacitance and low on resistance. In light sensing applications, MMBF4117 is used in LED displays, LED dimmer circuits, LED stroboscopes, LED night lamps and LED streetlights.
MMBF4117 also has uses in power applications, such as power regulators, high current switches and high voltage switching applications. Due to its low power consumption and high switching speed, it is often used in high power DC-DC convertors, works excellent in high voltage and high current application.
MMBF4117 is one of the most versatile JFETs available in the market today. It is used in a wide range of applications for its low noise, low power consumption and low drift. Its low on-resistance and high gate sensitivity makes it suitable for many digital and power applications. It is also used in many light sensing applications and telecommunications applications. With its versatile features, MMBF4117 is sure to find many applications and be popular among engineers.
The specific data is subject to PDF, and the above content is for reference
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