Allicdata Part #: | MMBF170LT3-ND |
Manufacturer Part#: |
MMBF170LT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 500MA SOT-23 |
More Detail: | N-Channel 60V 500mA (Ta) 225mW (Ta) Surface Mount ... |
DataSheet: | MMBF170LT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 200mA, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 225mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 (TO-236) |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The MMBF170LT3 device is a N–Channel enhancement–mode silicon vertical D–MOS transistor in a small plastic SMD package. It is suitable for low voltage and low current applications. This part is primarily used in mobile phones, smartphones, computers, portable audio players, PDAs, and gaming devices.
MMBF170LT3 is a moderate–speed, low–power N–channel enhancement–mode power MOSFET. It is designed for a high level of performance in medium–voltage applications. The device can operate efficiently in both high–volley and low–voltage applications. Specifically, the MMBF170LT3 can be used for switching high voltage loads on low voltage and/or temperature sensitive applications.
The MMBF170LT3 working principle is simple. When the MOSFET is turned off, the gate and drain of the MOSFET are electrically connected and a strong electric field is established by the drain voltage. This electric field prevents charge carriers from moving inside the channel, thereby turning it off. When the gate voltage is increased, it creates an additional electric field that weakens the drain voltage electric field and helps charge carriers move in the channel. As more charge carriers move, the drain current increases and the device turns on.
The MMBF170LT3 is a popular choice for its low on–state resistance and low gate capacitance. Additionally, its low gate charge and drive voltage make the MMBF170LT3 the perfect choice for low voltage applications such as computer monitors, LCD displays, and PDAs. Furthermore, the low power drain and superior immunity to electrostatic discharges allow the device to be used in a variety of hazardous environments.
The MMBF170LT3 is also suitable for power amplifier designs. Its low turn–on and turn–off times enable high efficiency operation. The addition of a gate resistor to the gate of the MMBF170LT3 will increase the gate current and voltage and prevent Vcb ringing due to charge accumulation around the gatedes directory. Furthermore, the resistor reduces the overshoot and undershoot seen in the switching waveforms.
The MMBF170LT3 is a great choice for designers and engineers looking for a low cost and reliable power MOSFET. It offers a wide operating junction temperature range and reliable performance. The device is well suited for most applications and is a cost effective solution for low voltage applications.
The specific data is subject to PDF, and the above content is for reference
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