MMBF4391LT1 Allicdata Electronics
Allicdata Part #:

MMBF4391LT1OSCT-ND

Manufacturer Part#:

MMBF4391LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V 0.225W SOT23
More Detail: JFET N-Channel 30V 225mW Surface Mount SOT-23-3 (...
DataSheet: MMBF4391LT1 datasheetMMBF4391LT1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 50mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 4V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 15V
Resistance - RDS(On): 30 Ohms
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MBF4391
Description

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Junction Field-Effect Transistors (JFETs) are widely used in the electronics industry for their ability to control current flow between two terminals by an externally applied voltage across a third terminal. The MMBF4391LT1 is one of the most commonly used JFETs in the industry due to its superior performance, high current ratings, and low thermal resistance. In this article we will discuss the application field and working principle of the MMBF4391LT1.

The MMBF4391LT1 is a N-channel, depletion-mode JFET that is used for applications such as audio amplifiers, voltage regulation, switching applications, and RF amplifiers. It has an extended temperature range of -55˚C to 150˚C, which makes it suitable for a variety of different conditions. The maximum drain current of this device is 250 mA, and its maximum drain-to-source voltage is 30V. The maximum transconductance of the device is 3.2 mS.

Like all JFETs, the MMBF4391LT1 has three terminals - the gate, drain, and source. The gate is a p-type material while the drain and source are both n-type material. The JFET operates by the application of an externally applied voltage across the gate and source terminals. This voltage causes a depletion layer to form in the region between the gate and source, which in turn creates an electric field between them. The electric field causes a depletion of charge carriers in the depletion layer, which results in a decrease in the number of carriers in the channel between the source and drain and an increase in the resistance in the channel. This results in a decreased current flow between the source and drain when the externally applied voltage is increased.

The MMBF4391LT1 can be used in a variety of applications due to its excellent characteristics. It is commonly used in audio amplifiers, voltage regulators, switching applications, and RF amplifiers. In audio amplifiers, the JFET’s low noise levels and superior performance make it an ideal choice. It can also be used in voltage regulators as it can handle large amounts of voltage and current. The device is also used in switching applications due to its low thermal resistance and high current ratings. It is also preferred in RF amplifiers due to its low noise and superior performance.

In conclusion, the MMBF4391LT1 is a popular N-channel, depletion-mode JFET that is used in applications such as audio amplifiers, voltage regulators, switching applications, and RF amplifiers due to its superior performance, low noise levels, high current ratings, and low thermal resistance. It operates by the application of an externally applied voltage across the gate and source terminals, which causes a depletion layer to form in the region between them. This causes current in the channel between the source and drain to be decreased when the externally applied voltage is increased.

The specific data is subject to PDF, and the above content is for reference

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