MMBFJ177LT1 Allicdata Electronics
Allicdata Part #:

MMBFJ177LT1OSCT-ND

Manufacturer Part#:

MMBFJ177LT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET P-CH 30V 0.225W SOT23
More Detail: JFET P-Channel 30V 225mW Surface Mount SOT-23-3 (...
DataSheet: MMBFJ177LT1 datasheetMMBFJ177LT1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V (VGS)
Resistance - RDS(On): 300 Ohms
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Base Part Number: MBFJ177
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMBFJ177LT1 is a widely used JFET (Junction Field-Effect Transistor) designed for a variety of real-world applications. With its low noise and power consumption, the MMBFJ177LT1 is consistently used for high-precision analog applications. In order to gain an understanding of its workings and use, a brief look at its construction, field of application, and working principle is necessary.

Construction

The MMBFJ177LT1 consists of an N-channel junction field-effect transistor, with a number of leads integrated into its design. It is packaged in a three-pin TO-72 plastic package, making it ideal for use in low-voltage portable devices. The three leads are the source, drain, and gate - which each play an integral role in how the field-effect transistor functions.

Application Field

The MMBFJ177LT1 is typically used for a variety of low-noise and low-power analog applications. It is ideal for use in portable electronics, as well as in audio amplifiers, signal buffers, and commonly used in radio frequency (RF) amplifiers. The MMBFJ177LT1 is also used in applications needing high-frequency operation with its low gate-to-drain capacitance. It is becoming increasingly used in high-precision analog circuits as well as in signal processing applications.

Working Principle

The MMBFJ177LT1 works by controlling the current flow between the source and the drain through control of an electric field. The electric field is the result of voltage applied between the gate and the source. The gate can then act as a voltage-controlled resistor that controls the current flow between the source and drain. This makes the MMBFJ177LT1 a fairly simple device, allowing low noise and low power consumption in a range of applications.

The MMBFJ177LT1’s high-power capabilities are indeed impressive, but it is within its capacity for accurate analog operations, low noise, and low power consumption that makes it a great choice for a variety of electronics applications. Its availability in a TO-72 package makes it ideal for portable and low-voltage devices, and its widespread use makes it something designers can depend on.

The specific data is subject to PDF, and the above content is for reference

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