MMBFJ112 Allicdata Electronics

MMBFJ112 Discrete Semiconductor Products

Allicdata Part #:

MMBFJ112TR-ND

Manufacturer Part#:

MMBFJ112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 35V 0.35W SOT-23
More Detail: JFET N-Channel 35V 350mW Surface Mount SOT-23-3
DataSheet: MMBFJ112 datasheetMMBFJ112 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: --
Resistance - RDS(On): 50 Ohms
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MBFJ112
Description

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The MMBFJ112 is a depletion-mode JFET (Junction Field-Effect Transistor) with a voltage rating of 60 volts and a continuous drain current of 1.3A. It was first introduced in May 2006 and is often used in a variety of electronic circuit applications.

JFETs are unipolar transistors which can be used as switches or amplifiers, or to provide linear control over the signal flow from one circuit to another. The MMBFJ112 is particularly useful due to its low on-state resistance, which allows low signal losses and high signal-to-noise ratios. The device is also very reliable and is capable of withstanding temperatures up to 150°C.

The MMBFJ112 works by controlling the current flow between its drain and source terminals. It is constructed from two sections of P-type semiconductor material which have an N-type semiconductor region in the middle. This N-type region is sometimes referred to as the transistor’s ‘gate’, and is used to control the current flow by applying a small voltage.

When the gate voltage is zero, no current can flow between the drain and source terminals. However, when a small positive voltage is applied to the gate, the flow of current is allowed and the MMBFJ112 becomes ’on’. Conversely, when a small negative voltage is applied, the flow of current is stopped and the device is ‘off’.

The MMBFJ112 is useful in a variety of signal control applications, from controlling the speed of motors or fans to regulating the intensity of lights or amplifying audio signals. It is also often used in digital logic circuits, such as those used for controlling DC motors or for signal conditioning in computers. Finally, it finds use in RF communications, such as in cellular networks, wireless networks, and satellite television systems.

The MMBFJ112 also offers some other advantages over other types of JFETs. These include higher junction capacitance and lower input capacitance, allowing for less signal distortion, higher on-state resistance, and lower trigger thresholds.

In summary, the MMBFJ112 is a versatile and reliable device, capable of withstanding high temperatures, and is suitable for a wide range of applications, from signal control to RF communications. Its low on-state resistance, high junction capacitance and low input capacitance make it a desirable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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