Allicdata Part #: | MMBFJ310LT1GOSTR-ND |
Manufacturer Part#: |
MMBFJ310LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | RF MOSFET N-CH JFET 10V SOT23 |
More Detail: | RF Mosfet N-Channel JFET 10V 10mA 12dB SOT-23-3 ... |
DataSheet: | MMBFJ310LT1G Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | 12dB |
Voltage - Test: | 10V |
Current Rating: | 60mA |
Noise Figure: | -- |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 25V |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBFJ310 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MMBFJ310LT1G is a surface mount N-channel JFET (Junction Field Effect Transistor) that is specifically designed for radio-frequency (RF) applications, such as amplifiers, low-noise pre-amps, and oscillators. These N-channel JFET transistors have low gate-source capacitances, which allow them to perform well at high frequencies up to 1.2GHz. This MMBFJ310LT1G transistor has a maximum power rating of +1.5W and a maximum drain-source voltage of 30V. It is also designed with a wide range of operating temperatures, ranging from -55°C to +125°C.
The MMBFJ310LT1G transistor works using an applied voltage from the gate, which acts to control the drain-source current based on the application. When the gate voltage is increased, the drain-source current increases as well. Thus, this transistor can act as an amplifier by increasing the gain of an applied voltage. Furthermore, the JFETs will also provide a static current control for a given voltage, which allows the user to adjust the bias of the device. This is helpful for the operations of RF amplifiers and oscillators, where the bias of the transistor must be adjusted in order to achieve optimal performance.
The JFET also provides useful features such as high input impedance and high frequency response. This high input impedance serves as a buffer, which is essentially a resistance between the gate and source of the device, that acts to protect the gate from external signals. With a high frequency response, the transistor can efficiently amplify and transmit signals up to 1.2 GHz, making it suitable for RF applications. Additionally, the wide range of operating temperatures make this JFET suitable for applications such as temperature sensing, HVAC control, and automotive systems.
The MMBFJ310LT1G N-Channel JFET transistor is available in a 3-pin, SOT-23 (Small Outline Transistor-23) package, and is a highly reliable and versatile device that can be used in a wide range of RF applications. Applications include UHF/VHF audio amplifiers, RF power amplifiers, wideband mixers, frequency multipliers, and bias circuits. Its structure and 3-pin design makes it easy to install and use for quick prototyping, and it is becoming increasingly popular in the electronics engineering and maker community.
The specific data is subject to PDF, and the above content is for reference
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