Allicdata Part #: | MMBF5457LT1OSCT-ND |
Manufacturer Part#: |
MMBF5457LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 0.225W SOT23 |
More Detail: | JFET N-Channel 25V 225mW Surface Mount SOT-23-3 (... |
DataSheet: | MMBF5457LT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Drain to Source Voltage (Vdss): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 500mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 15V |
Power - Max: | 225mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MBF5457 |
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MMBF5457LT1 is one of the most common type of Junction Field-effect Transistor (JFET) used in many applications. As the name suggests, this type of transistor is made up of a PN junction, instead of a metal-oxide-semiconductor. Because of its porous structure, the electric field forms evenly around the device, resulting in a high degree of stability and precision that makes it highly suitable for different applications.
In terms of working principle, JFETs use the majority charge carriers to control the voltage FET. The JFET\'s gate is made up of a P-type semiconductor, which allows the majority charge carriers (electrons) to easily pass through. When the source and gate are connected, the voltage drop from source to gate, known as the “Vgs”, determines the channel current through the device. This channel current, in turn, determines the voltage drop between drain and gate, known as “Vds”, and the amount of current flowing through the device is controlled with the gate-source voltage.
The most common application of MMBF5457LT1 is in the field of signal amplification, due to its high input impedance and low output impedance. This allows the transistor to be used as an amplifier in systems with a variety of input and output levels. Additionally, it is also often used in electronics circuits in order to power intricate devices such as LCD screens and microprocessors. As well, JFETs can often be used to generate temperature-dependent voltages, and are commonly found in temperature sensing applications.
MMBF5457LT1 is also known for its ability to generate high-frequency signal without signal distortion or oscillations. Due to this property, the transistor can be used in many different types of high-frequency switching systems, such as in RF signal amplification, audio frequency production, and digital transmission over long distances. Moreover, the transistor can be used in systems for time-division multiplexing, which requires that signals be transmitted at an exact rate with minimal signal decay.
Overall, the MMBF5457LT1 has numerous potential uses in many different fields, such as signal amplification, temperature sensing, and high-frequency switching. Thanks to its stable design and consistent performance, this type of transistor has become one of the most popular among JFETs and continues to be used in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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