MMBF2201NT1G

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The MMBF2201NT1G is a individually packaged N-Channel enhancement-mode V-MOS field-effect transistor with a low drain-source on-resistance and low gate-charge for fast switching. It is a commonly used power transistor manufactured by ON Semiconductor, which is frequently used in a variety of applications. As a single-gate field-effect transistor (FET), the MMBF2201NT1G operates on the principle of an electric field being used to control the conductivity of a channel in the device.

The MMBF2201NT1G is mainly used in power management applications, such as DC-DC converters, power switches, low-voltage battery chargers, and motor drives. It is also ideal for any application that requires fast switching and low on-resistance.

The MMBF2201NT1G has an operating voltage range from 2.5V to 10V with a 1.2V maximum gate threshold voltage and 11A maximum drain current. It also has a maximum breakdown voltage of 80V, an on-resistance of 22mΩ, and a total gate charge of 40nC. These specifications make the MMBF2201NT1G very efficient and versatile, as it can handle a wide range of applications.

The working principle of the MMBF2201NT1G is based on the principle of an electric field controlling the conductivity of a channel in the device. As current passes through the channel, voltage is applied to a gate and creates an electric field which affects the conductivity of the channel. This process is often referred to as the “MOSFET Effect”. The electric field created by the gate causes the channel to act as a resistor, allowing the flow of current to be precisely regulated.

The MMBF2201NT1G is an excellent choice for applications that require fast switching. Its low on-resistance and total gate charge mean that it can be used to quickly switch currents on and off. This makes it ideal for power management applications.

The MMBF2201NT1G is also useful in a variety of other applications, such as low-voltage battery chargers, motor drives, and power switches. With its low on-resistance and low gate-charge, it is a great choice for any application that requires fast switching and low power loss.

Overall, the MMBF2201NT1G is a versatile and powerful single-gate field-effect transistor (FET) that can be used in a variety of applications. It is efficient, fast-switching, and reliable, making it a great choice for any power management application.

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