Allicdata Part #: | MMBFJ201_G-ND |
Manufacturer Part#: |
MMBFJ201_G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | INTEGRATED CIRCUIT |
More Detail: | JFET N-Channel 40V 350mW Surface Mount SOT-23-3 |
DataSheet: | MMBFJ201_G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 200µA @ 20V |
Voltage - Cutoff (VGS off) @ Id: | 300mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBFJ201 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MMBFJ201_G is a transistor designed for field-effect transistor electronics. It belongs to a family of transistors called JFETs or Junction Field Effect Transistors. These transistors have three electrodes and rely on an electric current flowing through the gate to control the amount of current flowing between the source and the drain.
The MMBFJ201_G is an enhancement mode JFET, meaning it has the highest drain current when the gate is at the same potential as the source, and the current is reduced by reducing the gate potential. This transistor has a drain-source voltage of 100 volts and a maximum drain current of 250 mA. It can be used in wide variety of electronics, from amplifiers to low-noise preamplifiers, depending on the application.
The operating principle of this transistor is fairly simple. The gate and the source act as two semiconducting junction. When the gate-source voltage is high (positive), the current flowing into the drain-source junction from the gate-source junction is blocked (this is known as the pinch-off effect). When the gate-source voltage is low (negative), the current flowing from the gate-source junction to the drain-source junction is allowed (this is known as the enhancement effect).
The amount of current flowing between the source and the drain is determined by the gate-source voltage, which can be controlled by an external voltage or current. When the gate-source voltage is 0V, the current flow is at its maximum; when the gate-source voltage is negative, the current flow is decreased to a minimum. Therefore, it is possible to use this transistor as an amplifier or a switch, depending on the application.
The MMBFJ201_G is a versatile transistor that can be used for a wide range of applications, from amplifiers to voltage stabilizers. It is also very easy to use, making it a popular choice for engineers and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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