MMBF5103 Allicdata Electronics

MMBF5103 Discrete Semiconductor Products

Allicdata Part #:

MMBF5103TR-ND

Manufacturer Part#:

MMBF5103

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 40V 0.35W SOT-23
More Detail: JFET N-Channel 40V 350mW Surface Mount SOT-23-3
DataSheet: MMBF5103 datasheetMMBF5103 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06468
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 1.2V @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MBF5103
Description

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<div class="category-transistors-jfets"><p>The MMBF5103 is a High-Performance Insulated Gate Bipolar Transistor, often referred to as an IGBT or a MOSFET. It is widely used in the industrial and automotive industries as a power switch. This device belongs to the family of Field-Effect Transistors (FETs) and is a very versatile and efficient switching device. In this article, we will discuss the application field and working principle of this device.</p><h2>Application Field</h2><p>The MMBF5103 is mainly used for high current switching applications, where it can be utilized as a power switch with extremely low on-resistance levels. The device is typically used in the industrial and automotive industries, where it is used to provide better protection for sensitive electronic components. In addition, the device is also used for high-speed switching applications, where it can be utilized to control the switching time of high voltages, allowing for greater energy efficiency.</p><h2>Working Principle</h2><p>The working principle of the MMBF5103 is based on the concept of the Field-Effect Transistor (FET) and its three terminals, one of which is the gate (G). The device operates as an Insulated Gate Bipolar Transistor, meaning that a positive voltage is applied to the gate terminal, which in turn controls the current flow through the drain and source terminals. Depending on the voltage level of the gate, the current will decrease or increase its flow through the device, allowing for a quick and efficient power switch.</p><p>The device also utilizes a Thermal Impedance specification, which helps to keep the device within its switchable power rating. This specification is important for keeping the device from overheating, which can lead to an irreversible short circuit. In addition, the device also includes several other protection mechanisms, such as the Over Voltage Protection (OVP), Under Voltage Lockout (UVLO), and Thermal Shutdown (TSD). These mechanisms help to protect both the device and its surrounding components from any potential damage.</p><p>The MMBF5103 is a great device for powering a wide range of industrial and automotive applications. With its extremely low on-resistance levels and multiple protection mechanisms, it is an ideal choice for providing reliable and efficient power switching.</p></div>

The specific data is subject to PDF, and the above content is for reference

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