| Allicdata Part #: | MMBF5484LT1OSCT-ND |
| Manufacturer Part#: |
MMBF5484LT1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | JFET N-CH 25V 0.225W SOT23 |
| More Detail: | JFET N-Channel 25V 225mW Surface Mount SOT-23-3 (... |
| DataSheet: | MMBF5484LT1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Cut Tape (CT) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Voltage - Breakdown (V(BR)GSS): | 25V |
| Current - Drain (Idss) @ Vds (Vgs=0): | 1mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id: | 300mV @ 10nA |
| Input Capacitance (Ciss) (Max) @ Vds: | 5pF @ 15V |
| Power - Max: | 225mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | MBF5484 |
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MMBF5484LT1 application field and working principle
The MMBF5484LT1 is a member of the family of dual JFETs produced by Fairchild Semiconductor. This dual JFET is a small signal device with most common uses being preamplifiers, drivers, and switches. It has an absolute maximum drain source voltage of 20V and a continuous drain current rating of 11A. The maximum power dissipation for the device is 500mW. Furthermore, the device is particularly well suited for use in sample and hold circuits, and low noise amplifiers.
Application Areas
The MMBF5484LT1 is a small signal device that can be used in a variety of applications from basic preamplifiers to sample and hold circuits. It is well-suited for applications such as telephone systems, electronic security/alarm systems, intercom systems, and industrial process control. The dual JFET can also be used in moderate power applications such as relays and switching circuits, as well as high power applications such as DC motor control and power amplifiers.
Working Principle
JFETs, or junction-gate-field-effect transistors, are devices composed of two junctions, the source and the drain. A JFET operates when a voltage applied to the gate of the device attracts mobile charge carriers in the form of electrons and holes. This charge produces an electric field and a depletion region is created between the source and drain junctions. As a result, the electric current generated is a function of the electric field between the junctions, and can be adjusted with a varying control gate bias applied to the device. By controlling the electric field, the drain current of the JFET can be adjusted, therefore allowing it to be used as an amplifier, */switch, preamplifier, or for other various signal processing applications.
Conclusion
The MMBF5484LT1 dual JFET is a versatile device that can be used in a variety of applications due to its versatile capabilities. It can be used as an amplifier, switch, preamplifier, or for signal processing. Furthermore, it has high voltage and current ratings, making it well suited for applications in moderate power and even high power circuits. Understanding the working principle of JFETs is important for anyone looking to utilize the full potential of the MMBF5484LT1.
The specific data is subject to PDF, and the above content is for reference
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MMBF5484LT1 Datasheet/PDF