MMBF4392 Discrete Semiconductor Products |
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Allicdata Part #: | MMBF4392TR-ND |
Manufacturer Part#: |
MMBF4392 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 30V 0.35W SOT-23 |
More Detail: | JFET N-Channel 30V 350mW Surface Mount SOT-23-3 |
DataSheet: | MMBF4392 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 25mA @ 20V |
Voltage - Cutoff (VGS off) @ Id: | 2V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 14pF @ 20V |
Resistance - RDS(On): | 60 Ohms |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBF4392 |
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The MMBF4392 is a type of junction field-effect transistor (JFET) designed primarily for switching and signal processing applications. This transistor is manufactured by Panasonic Semiconductor Solutions, a leading provider of semiconductor technology solutions. The MMBF4392 is a N-channel JFET intermetal oxide semiconductor field-effect transistor (IGFET) with three pins – the source, the drain, and the gate. The MMBF4392 offers a high input impedance, low off-state leakage, low on-state resistance, and fast switching speed with low power consumption.The working principle of the MMBF4392 is based on field-effect technology. In this technology, the flow of current through the transistor is controlled by an electric field-induced by a voltage applied to the gate terminal. The MMBF4392 has an insulated gate that is connected to the source, drain and substrate. When voltage is applied to the gate, an electric field is established which causes a current to flow between the source and drain, creating a conducting channel. This allows current to flow through the transistor and is controlled by varying the amount of voltage applied to the gate.The MMBF4392 can be used in a variety of electronic circuits such as audio amplifiers, radio-frequency (RF) amplifiers, switched-mode power supplies (SMPS), power inverters, and other electronic devices. It is ideally suited for applications where rapid switching is needed, such as photoswitch circuits, ultrasonic detector circuits, computer power supplies, and switching regulator circuits. It is also commonly used in display backplanes and digital logic circuits.The MMBF4392 operates with a maximum power dissipation of 650 milliwatts (mW) and a breakdown voltage of 17 volts. Its gate-source capacitance rating is 12.1 picofarads (pF) and maximum gate to-drain capacitance is 18.8 pF. It has a maximum operating temperature range of -55 to 125 degrees Celsius, and a storage temperature range of -65 to 150 degrees Celsius.The MMBF4392 is a versatile and reliable transistor ideal for a wide range of switching and signal processing applications. It offers fast switching speed and low power consumption, making it an ideal choice for applications requiring performance, reliability and cost-effectiveness.
The specific data is subject to PDF, and the above content is for reference
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