MMBF4393LT3G Discrete Semiconductor Products |
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| Allicdata Part #: | MMBF4393LT3GOSTR-ND |
| Manufacturer Part#: |
MMBF4393LT3G |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | JFET N-CH 30V 0.225W SOT23 |
| More Detail: | JFET N-Channel 30V 225mW Surface Mount SOT-23-3 (... |
| DataSheet: |  MMBF4393LT3G Datasheet/PDF |
| Quantity: | 1000 |
| 10000 +: | $ 0.06818 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Voltage - Breakdown (V(BR)GSS): | 30V |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Drain (Idss) @ Vds (Vgs=0): | 5mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id: | 500mV @ 10nA |
| Input Capacitance (Ciss) (Max) @ Vds: | 14pF @ 15V |
| Resistance - RDS(On): | 100 Ohms |
| Power - Max: | 225mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 (TO-236) |
| Base Part Number: | MBF4393 |
Description
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MMBF4393LT3G is a dual-gate N-channel junction-field effect transistor developed by FRFET technology. It has low on-state resistance, wide dynamic range, and good temperature and frequency stability. Its application field is mainly used in analog switching circuits, small signal amplifiers, level shifters, current sources, large signal amplifiers and other applications.As its name implies, it is a field-effect transistor. It has two gates, namely the drain and source, and can be split into two separate parts. It has a typically low input resistance, which is lower than the drain resistance, so it is easy to control the current to pass through it. In addition, the gate bias can be used to control the drain current, making it suitable for various circuits.The working principle of MMBF4393LT3G is similar to that of a JFET. When the gate voltage is below the pinch off voltage, the device is said to be in its cut-off state, and no current will flow in the device. When the gate voltage exceeds the pinch off voltage, the device can conduct current and is said to be in the on state. By controlling the gate voltage, the current flowing through the device can be adjusted.In addition, MMBF4393LT3G is also equipped with a large signal power amplifier, allowing the device to output a large amount of current with a low gate voltage. This feature makes the device suitable for use in wide signal amplifier applications. For example, MMBF4393LT3G can be used to build a signal amplifier that can amplify electrical signals with a wide dynamic range up to a high voltage.The MMBF4393LT3G can also be used as a level shifter. By using the drain as a gate and controlling the gate voltage, it is possible to shift the voltage level of the signal, which can be useful in a variety of different applications. For example, it can be used to build a level shifter that can shift the voltage levels of signals from one circuit to another in order to ensure compatibility with different components.Overall, the MMBF4393LT3G is a versatile and robust dual-gate N-channel junction-field effect transistor with low on-state resistance and wide dynamic range, making it suitable for use in many different applications. Its working principle is similar to that of a JFET, making it easy to control and adjust the current flow, making it very useful in various analog and digital circuits.
The specific data is subject to PDF, and the above content is for reference
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