MMBF170-7-F Allicdata Electronics

MMBF170-7-F Discrete Semiconductor Products

Allicdata Part #:

MMBF170-FDITR-ND

Manufacturer Part#:

MMBF170-7-F

Price: $ 1.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 500MA SOT23-3
More Detail: N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount ...
DataSheet: MMBF170-7-F datasheetMMBF170-7-F Datasheet/PDF
Quantity: 1000
1 +: $ 1.95000
10 +: $ 1.89150
100 +: $ 1.85250
1000 +: $ 1.81350
10000 +: $ 1.75500
Stock 1000Can Ship Immediately
$ 1.95
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The MMBF170-7-F metal oxide semiconductor field-effect transistor (MOSFET) is a low-voltage and high-current carrying device with an ultra-low on resistance. It has high levels of efficiency and minimal power consumption. Designed for switching and amplification applications in industrial, automotive, and consumer electronics equipment, MMBF170-7-F has the following properties:

Physical Specs: MMBF170-7-F has a drain-source voltage (VDSS) of 100 Volts (V), a drain-source current of -6 Amperes (A), a gate-source voltage (VGS) of ±20V maximum, a total gate charge (Qg) of 76 nano-Coulombs (nC), an on-resistance (RDS(on)) of 160 milliohm (mΩ) @ VGS=10V, and its maximum power (PD) dissipation is 0.7W.

Applications: One common application for MMBF170-7-F is as a switch or amplifier. It is highly efficient and has a low voltage drop, so it is often used as a power switch in automotive, industrial, and consumer electronics applications. For example, MMBF170-7-F can be used as a motor control switch, a power source switch, a voltage regulator, and a current switch.

Working Principle: The MMBF170-7-F operates on a basic principle of two types of fields: parasitic capacitance that effects the drain-source voltage (VDS) and the gate-source voltage (VGS). The parasitic capacitance is a function of the surface area of the MOSFET; larger regions of the transistor have more of an effect on the parasitic capacitance. The VDS is controlled by the VGS, which sets the polarity between the source and the drain. In the MMBF170-7-F, when a voltage is applied from the gate to the source, the electrons become repelled from the source to the drain, forming an inversion layer. This creates a reverse current flow from the drain to the source, which is amplified by the MOSFET. This reverse current flow is the switching action of the MMBF170-7-F.

Overall, the MMBF170-7-F is an excellent device for switching and amplifier applications due to its small size, high efficiency, and low power requirement. It is a great choice for automotive, industrial, and consumer electronics applications. With its ultra-low on resistance, high levels of efficiency, and minimal power consumption, the MMBF170-7-F is a great way to boost performance in any circuit.

The specific data is subject to PDF, and the above content is for reference

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