Allicdata Part #: | MMBFJ177_G-ND |
Manufacturer Part#: |
MMBFJ177_G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | INTEGRATED CIRCUIT |
More Detail: | JFET P-Channel 30V 225mW Surface Mount SOT-23-3 |
DataSheet: | MMBFJ177_G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1.5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 800mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 225mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBFJ177 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MMBFJ177_G is a type of Field Effect Transistor (FET) commonly known as a Junction Field Effect Transistor (JFET). It is a type of FET that uses voltage applied between a gate and a source to control the current in the channel between a drain and the source.
The MMBFJ177_G has a wide range of applications within the field of electronics, most commonly as a switch or amplifier. When used as a switch it is capable of switching on and off depending on the voltage potential between the drain and the source. This is achieved by applying a positive voltage to the gate which will attract the electrons from the source to the gate creating a lower resistance path from the source to the drain thereby allowing current from the drain to the source. When used as an amplifier, the MMBFJ177_G takes in a low voltage and amplifies it which can then be used in a variety of applications such as amplifying a microphone.
The MMBFJ177_G is both energy efficient and fast, allowing it to be used in situations where a relatively low power device is required to operate quickly, such as motor control or audio applications. The MMBFJ177_G is also relatively small and lightweight, so it is suitable for use in more space-constrained designs.
The MMBFJ177_G is constructed in a similar way to a BJT transistor. It is constructed from semiconductor material with a gate, a source, and a drain. A voltage applied between the gate and the source forms a potential barrier which affects the current flowing through the channel between the drain and the source. By varying the voltage between the gate and the source, the MMBFJ177_G can be used to control the current flowing through the channel.
The MMBFJ177_G has some advantages over other types of FETs, most notably, its cost. The MMBFJ177_G is much cheaper than other types of FETs, such as MOSFETs and IGBTs, and this makes it attractive for use in many low cost applications. In addition, the MMBFJ177_G has very low power consumption, which makes it well suited for applications where power consumption is a concern. It also has very good linearity, which is important for applications where accuracy is essential.
In conclusion, the MMBFJ177_G is a popular and versatile Field Effect Transistor (FET) with a wide range of applications. It is capable of being used as a switch, amplifier or for other purposes where both speed and energy efficiency are desired. Its low cost and good linearity make it a good choice for many low cost, low power applications. Its small size and lightweight construction make it suitable for use in more space-constrained designs.
The specific data is subject to PDF, and the above content is for reference
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