MMBFJ177_G Allicdata Electronics
Allicdata Part #:

MMBFJ177_G-ND

Manufacturer Part#:

MMBFJ177_G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: INTEGRATED CIRCUIT
More Detail: JFET P-Channel 30V 225mW Surface Mount SOT-23-3
DataSheet: MMBFJ177_G datasheetMMBFJ177_G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 1.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 800mV @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MBFJ177
Description

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The MMBFJ177_G is a type of Field Effect Transistor (FET) commonly known as a Junction Field Effect Transistor (JFET). It is a type of FET that uses voltage applied between a gate and a source to control the current in the channel between a drain and the source.

The MMBFJ177_G has a wide range of applications within the field of electronics, most commonly as a switch or amplifier. When used as a switch it is capable of switching on and off depending on the voltage potential between the drain and the source. This is achieved by applying a positive voltage to the gate which will attract the electrons from the source to the gate creating a lower resistance path from the source to the drain thereby allowing current from the drain to the source. When used as an amplifier, the MMBFJ177_G takes in a low voltage and amplifies it which can then be used in a variety of applications such as amplifying a microphone.

The MMBFJ177_G is both energy efficient and fast, allowing it to be used in situations where a relatively low power device is required to operate quickly, such as motor control or audio applications. The MMBFJ177_G is also relatively small and lightweight, so it is suitable for use in more space-constrained designs.

The MMBFJ177_G is constructed in a similar way to a BJT transistor. It is constructed from semiconductor material with a gate, a source, and a drain. A voltage applied between the gate and the source forms a potential barrier which affects the current flowing through the channel between the drain and the source. By varying the voltage between the gate and the source, the MMBFJ177_G can be used to control the current flowing through the channel.

The MMBFJ177_G has some advantages over other types of FETs, most notably, its cost. The MMBFJ177_G is much cheaper than other types of FETs, such as MOSFETs and IGBTs, and this makes it attractive for use in many low cost applications. In addition, the MMBFJ177_G has very low power consumption, which makes it well suited for applications where power consumption is a concern. It also has very good linearity, which is important for applications where accuracy is essential.

In conclusion, the MMBFJ177_G is a popular and versatile Field Effect Transistor (FET) with a wide range of applications. It is capable of being used as a switch, amplifier or for other purposes where both speed and energy efficiency are desired. Its low cost and good linearity make it a good choice for many low cost, low power applications. Its small size and lightweight construction make it suitable for use in more space-constrained designs.

The specific data is subject to PDF, and the above content is for reference

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