MMBFU310LT1G Discrete Semiconductor Products

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The MMBFU310LT1G is a Field Effect Transistor (FET) featuring high voltage, high speed switching. It is a Junction FET (JFET) specifically designed for use in power switch applications. It is a N-channel depletion mode transistor with a maximum current of 350mA. Its features make it suitable for power supplies, SMPS,inverters and other similar switch application.

The MMBFU310LT1G is constructed with a N-channel JFET, meaning they are formed by forming a P-channel by reverse biasing a semiconductor junction and then adding a third terminal to control the flow of current through the channel. This allows the transistors to perform as a solid state switch which can be controlled by an electrical signal. This makes them ideal for applications such as pulse control, digital switching and amplifiers.

The main advantage of the MMBFU310LT1G is its speed and power efficiency. It has a high voltage breakdown of 140V and is capable of switching at speeds of up to 200V/ μs. This makes it ideal for applications requiring high speed, low power switching. The MMBFU310LT1G has a low Rss drain-source resistance and can handle high peak currents of 350mA.

The MMBFU310LT1G features a surge protection diode to reduce over voltage protection and also reduce the effect of inductive transients. It also features a high reliability dielectric strength of 125C/W. This makes it suitable for use in mission critical applications.

The MMBFU310LT1G is a versatile, high performance FET which can be used in a range of applications. It is often used in power supplies, SMPS, inverters, motor control, ripple control and DC-DC converters. It is also suitable for digital switching and amplifier applications. The MMBFU310LT1G is well suited to high speed power supply and switch applications due to its low on resistance, high switching speed and peak currents of up to 350mA.

The working principle of the MMBFU310LT1G is simple. When the gate voltage is greater than the source voltage, current flows from the drain to the source. This current is controlled by the amount of voltage that is applied to the gate. The flow of current is proportional to the amount of voltage applied.

When the gate voltage is decreased, the flow of current is decreased. This makes the MMBFU310LT1G an ideal device for applications requiring precise control of current, such as motor control, digital switching and amplifiers.

In summary, the MMBFU310LT1G is a versatile, high performance FET ideal for use in a range of applications. It offers high voltage breakdown and fast switching speeds, as well as surge protection and high reliability. It has a current rating of 350mA, making it suitable for high speed, low power switching applications. It is well suited to digital switching, motor control, ripple control, DC-DC converters and digital amplifiers.

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