MMBFJ113 Discrete Semiconductor Products |
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Allicdata Part #: | MMBFJ113TR-ND |
Manufacturer Part#: |
MMBFJ113 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 35V 350MW SOT23 |
More Detail: | JFET N-Channel 35V 350mW Surface Mount SOT-23-3 |
DataSheet: | MMBFJ113 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 35V |
Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 500mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 100 Ohms |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBFJ113 |
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MMBFJ113 is a device with an array of surface-mounted high voltage junction field-effect transistors (JFETs). It is designed to control electric current in medium and high frequency analog circuits. The main uses of the device involve controlling current in amplifiers, digital signal processing, audio applications, modulators and demodulators.
The device is capable of controlling electric current and providing dynamic control of signal frequency and gain, allowing it to be used in radiofrequency (RF) circuits. Additionally, its small size makes it well-suited for use in space-limited circuits like portable electronic and automotive electronic devices.
The MMBFJ113 is composed of several JFETs that act as switches for regulating electric current. Its various components and design elements provide important functions for controlling current in specific applications. Its drain and gate pins are connected to terminals and integrated circuitry to create a two-terminal circuit in which electric current can be regulated.
The MMBFJ113 operates on the same principle as other field-effect transistors. Each transistor works by using an electric field to control the current flowing through the device. This field is generated by a voltage applied to the gate terminal, which controls the flow of current through the drain and source terminals. By controlling the voltage applied to the gate terminal, the current can be regulated and its flow adjusted to meet specific requirements.
In the MMBFJ113, the field-effect transistors are placed in an array and connected to each other to provide increased levels of control. By controlling the gate terminals, the various stages can be opened or closed to control the current flow. When the stage is closed, the current cannot flow through it. When it is opened, current can flow through it, allowing for dynamic control of voltage and gain.
The device can be used in various applications, such as radio frequency (RF) amplifiers and digital signal processing. Its fast response time and small size make it well-suited for use in portable electronic and automotive electronic devices. It can also be used in audio applications, modulators and demodulators. The device can be used to provide precision control of voltage and gain without the need for additional components or circuitry.
The MMBFJ113 is a versatile device with several advantages that make it especially useful in many applications. Its compact size and fast response time make it ideal for use in space-limited circuits, while its array of transistors provides excellent control of electric current. Its ability to control voltage and gain without additional components or circuitry makes it a reliable and cost-effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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