MMBFJ176 Discrete Semiconductor Products |
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Allicdata Part #: | MMBFJ176TR-ND |
Manufacturer Part#: |
MMBFJ176 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET P-CH 30V 0.225W SOT23 |
More Detail: | JFET P-Channel 30V 225mW Surface Mount SOT-23-3 |
DataSheet: | MMBFJ176 Datasheet/PDF |
Quantity: | 81000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 1V @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Resistance - RDS(On): | 250 Ohms |
Power - Max: | 225mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBFJ176 |
Description
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Introduction to MMBFJ176
The MMBFJ176 is an N-channel junction field effect transistor (JFET). It is produced by ON Semiconductor and is made from silicon-gate FET technology. The device features an extremely low noise figures and reverse leakage current; and offers excellent transconductance stability, linearity and low distortion. The device is typically applied in audio preamps, VCOs, and low-noise amplifiers, and other audio circuits requiring very low-noise performance.Physical and Electrical Characteristics of MMBFJ176
The MMBFJ176 has a maximum VGS of -8V and an IDSS of 7mA. The device is housed in an SOIC-8 molded plastic package and has an insulation resistance of 6 GΩ when measured at 25 oC. The device has a maximum power dissipation of 500mW at a case temperature of 25oC and a maximum continuous drain current of 1A. The thermal resistance junction-to-ambient for this transistor is 10oC/W.Application of MMBFJ176
The MMBFJ176 is a low noise field effect transistor that is widely used in audio amplifiers, preamps, and low-noise amplifiers. The device is suitable for use in VCOs, comparators, mixing circuits and low-noise RF amplifiers. It can also be applied in two-stage amplifiers for noise reduction of electrical signals, particularly in the audio frequency range.Working Principle of MMBFJ176
The MMBFJ176 consists of a source, drain, and gate connections. The gate-source junction is reverse-biased and is maintained in this condition. When a positive voltage is applied to the gate, it creates an induced electric field which repels the electrons, allowing them to drift away from the source connection. This negatively charges the drain resulting in a current flow. When a negative voltage is applied to the gate, the electric field created repels the electrons back towards the source connection. This causes the drain voltage to become positive, reducing the current flow.Advantages of MMBFJ176
The MMBFJ176 is designed to provide excellent linearity in audio applications.It is also low distortion and low reverse leakage current make it suitable for a variety of applications. In addition, the device features an extremely low noise figures and a wide dynamic range. It has a high thermal stability and good thermal conductivity.Conclusion
The MMBFJ176 is a widely used JFET transistor that is typically applied in audio preamps, VCOs, and low-noise amplifiers. It offers excellent linearity, low distortion, and low noise figures making it ideal for a variety applications. It also has a high thermal stability, good thermal conductivity and a wide dynamic range.The specific data is subject to PDF, and the above content is for reference
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