MMBFJ270 Discrete Semiconductor Products |
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| Allicdata Part #: | MMBFJ270TR-ND |
| Manufacturer Part#: |
MMBFJ270 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | JFET P-CH 30V 0.225W SOT23 |
| More Detail: | JFET P-Channel 30V 225mW Surface Mount SOT-23-3 |
| DataSheet: | MMBFJ270 Datasheet/PDF |
| Quantity: | 6000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Voltage - Breakdown (V(BR)GSS): | 30V |
| Current - Drain (Idss) @ Vds (Vgs=0): | 2mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id: | 500mV @ 1nA |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Power - Max: | 225mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Base Part Number: | MBFJ270 |
Description
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IntroductionThe MMBFJ270 is an N-channel junction field effect transistor (JFET) designed for switching and small-signal amplifier applications. It uses a double-diffusion process for fabrication and is made from a planar N-channel MOSFET developed by Motorola. It has high current gains, stable switching characteristics, and is widely used in commercial and industrial applications.
Application Field
The MMBFJ270 is a versatile field effect transistor and can be used in a variety of applications. Its high current gains and stability make it suitable for use in several analog circuit applications such as voltage switching, current switching, and amplifier stages. It can be used in RF amplifiers, logic circuits, switches, and voltage-controlled circuits. Additionally, it is well suited for medium-power switching applications in consumer electronics and automotive equipment. Its size and cost efficiency in comparison to bipolar transistors also contribute to its widespread usage.
Working Principle
The MMBFJ270 is a P-type device which operates based on the principle of electron flow, where electrons move from the P-type region to the N-type region. The device consists of three layers: a P+ substrate, a thin N-type channel, and an N+ gate. The gate contains an oxide layer which forms an insulating barrier between the P-type and N-type regions. When a voltage is applied to the gate, it polarizes the oxide layer, changing the potential of the channel and influencing the current flowing from the source to the drain. This allows the device to act as both a resistor and an amplifier.
Conclusion
The MMBFJ270 is a versatile and cost-effective JFET designed for analog applications. Its size and price make it an attractive option for small-signal switching operations, where high performance and reliability are essential. Additionally, its double-diffusion process and robust design make it suitable for commercial and industrial applications such as RF amplifiers, logic circuits, and voltage-controlled circuits.
The specific data is subject to PDF, and the above content is for reference
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MMBFJ270 Datasheet/PDF