MMBFJ270 Allicdata Electronics

MMBFJ270 Discrete Semiconductor Products

Allicdata Part #:

MMBFJ270TR-ND

Manufacturer Part#:

MMBFJ270

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET P-CH 30V 0.225W SOT23
More Detail: JFET P-Channel 30V 225mW Surface Mount SOT-23-3
DataSheet: MMBFJ270 datasheetMMBFJ270 Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 225mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: MBFJ270
Description

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Introduction
The MMBFJ270 is an N-channel junction field effect transistor (JFET) designed for switching and small-signal amplifier applications. It uses a double-diffusion process for fabrication and is made from a planar N-channel MOSFET developed by Motorola. It has high current gains, stable switching characteristics, and is widely used in commercial and industrial applications.

Application Field
The MMBFJ270 is a versatile field effect transistor and can be used in a variety of applications. Its high current gains and stability make it suitable for use in several analog circuit applications such as voltage switching, current switching, and amplifier stages. It can be used in RF amplifiers, logic circuits, switches, and voltage-controlled circuits. Additionally, it is well suited for medium-power switching applications in consumer electronics and automotive equipment. Its size and cost efficiency in comparison to bipolar transistors also contribute to its widespread usage.

Working Principle
The MMBFJ270 is a P-type device which operates based on the principle of electron flow, where electrons move from the P-type region to the N-type region. The device consists of three layers: a P+ substrate, a thin N-type channel, and an N+ gate. The gate contains an oxide layer which forms an insulating barrier between the P-type and N-type regions. When a voltage is applied to the gate, it polarizes the oxide layer, changing the potential of the channel and influencing the current flowing from the source to the drain. This allows the device to act as both a resistor and an amplifier.

Conclusion
The MMBFJ270 is a versatile and cost-effective JFET designed for analog applications. Its size and price make it an attractive option for small-signal switching operations, where high performance and reliability are essential. Additionally, its double-diffusion process and robust design make it suitable for commercial and industrial applications such as RF amplifiers, logic circuits, and voltage-controlled circuits.

The specific data is subject to PDF, and the above content is for reference

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