Allicdata Part #: | MMUN2136LT1G-ND |
Manufacturer Part#: |
MMUN2136LT1G |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 246MW SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | MMUN2136LT1G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.01323 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 (TO-236AB) |
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The MMUN2136LT1G is a type of Transistor - Bipolar (BJT) - Single, Pre-Biased. As a type of transistor, it has many applications and working principles that can be used to develop electrical circuits.
One of the major applications of the MMUN2136LT1G is for use in voltage controlled oscillator (VCO) circuits. VCOs are often used as frequency synthesizers, clock generators and oscillators in communication and control systems, such as radios and televisions. The MMUN2136LT1G can be used in these types of applications due to its pre-biased, single transistor design. This design allows the transistor to perform well in the presence of high frequency electric noise, while also providing impedance and gain control.
Another application of the MMUN2136LT1G is in analog-to-digital and digital-to-analog converters. Analog-to-digital and digital-to-analog converters are used to convert digital signals into analog forms, and vice versa. The pre-biased design of the MMUN2136LT1G allows for efficient conversion of digital signals into analog forms, and vice versa.
As for the working principle of the MMUN2136LT1G, it is a bipolar transistor which means it has two distinct semiconductor layers. The base layer is the layer that is usually fed power and the collector layer is what is usually used to receive the output from the transistor. When power is fed to the base layer, it creates holes in the base layer which cause electrons to enter the collector layer. This creates a current flow between the two layers, which is then outputted from the transistor.
In addition to the two layers, the MMUN2136LT1G also has a third layer, known as the emitter layer. The emitter layer is used to control the flow of electrons between the base and the collector layers. The emitter layer can be used to regulate the current flowing between the collector and the base layers, allowing for precise control of the transistor’s output.
The MMUN2136LT1G is a type of pre-biased bipolar transistor which means it is designed to operate with a small amount of forward bias. This means that it can be used in circuits where the power supply does not provide enough voltage for the transistor to operate at maximum efficiency. This makes the MMUN2136LT1G ideal for use in circuits where a high level of performance is required in situations where the power supply is limited.
The MMUN2136LT1G is a type of Transistor – Bipolar (BJT) – Single, Pre-Biased. Due to its pre-biased, single transistor design, it is well suited for use in voltage controlled oscillator (VCO) circuits, analog-to-digital and digital-to-analog converters, and other applications which require high performance and precise control. Furthermore, it is designed to be able to operate with a small amount of forward bias, making it ideal for use in circuits which have a limited power supply.
The specific data is subject to PDF, and the above content is for reference
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